Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
<p>Abstract</p> <p>The surface morphology of Ge<sub>0.96</sub>Sn<sub>0.04</sub>/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) <it>ex situ </it>has b...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
|
| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/85 |