First-Order Optical Phonon Processes in Amorphous Clusters
Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small clusters in the context of dynamical disorder are considered. Average values of the absorption contributions due to both dynamical and structural disorders are introduced. In particular, an equation fo...
Main Authors: | , |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
1994-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1994/56526 |
Summary: | Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small
clusters in the context of dynamical disorder are considered. Average values of the absorption contributions
due to both dynamical and structural disorders are introduced. In particular, an equation for
the spectrum due to dynamical disorder in amorphous SiC is presented. |
---|---|
ISSN: | 0882-7516 1563-5031 |