First-Order Optical Phonon Processes in Amorphous Clusters
Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small clusters in the context of dynamical disorder are considered. Average values of the absorption contributions due to both dynamical and structural disorders are introduced. In particular, an equation fo...
Main Authors: | M. A. Grado Caffaro, M. Grado Caffaro |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
1994-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1994/56526 |
Similar Items
-
A Discussion on the Phonon
Density of States of Amorphous Germanium for the Infrared Range
by: M. A. Grado-Caffaro, et al.
Published: (1998-01-01) -
On Cluster Calculation for Amorphous Tetrahedrally Bonded
Semiconductors
by: M. A. Grado-Caffaro, et al.
Published: (1997-01-01) -
A Small Cluster Approach for the Electronic Density of States in
Amorphous Germanium
by: M. A. Grado-Caffaro, et al.
Published: (1998-01-01) -
A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide
by: M. A. Grado-Caffaro, et al.
Published: (1998-01-01) -
A New Mathematical Model for Cluster Calculation in Tetrahedrally
Bonded Amorphous Semiconductors
by: M. A. Grado Caffaro, et al.
Published: (1993-01-01)