Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing
Industrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and ma...
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doaj-e73310320bef421caf9ce0c528cb53982020-11-25T01:13:33ZengMDPI AGEnergies1996-10732018-09-01119233710.3390/en11092337en11092337Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic ManufacturingChiara Modanese0Hannu S. Laine1Toni P. Pasanen2Hele Savin3Joshua M. Pearce4Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, FinlandDepartment of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, FinlandDepartment of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, FinlandDepartment of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, FinlandDepartment of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, FinlandIndustrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and may prevent power conversion efficiency degradation under light exposure. Black-Si allows a potential for >20% PERC cells using cheaper multicrystalline silicon (mc-Si) materials, although dry-etching is widely considered too expensive for industrial application. This study analyzes this economic potential by comparing costs of standard texturized Cz-Si and black mc-Si PERC cells. Manufacturing sequences are divided into steps, and costs per unit power are individually calculated for all different steps. Baseline costs for each step are calculated and a sensitivity analysis run for a theoretical 1 GW/year manufacturing plant, combining data from literature and industry. The results show an increase in the overall cell processing costs between 15.8% and 25.1% due to the combination of black-Si etching and passivation by double-sided atomic layer deposition. Despite this increase, the cost per unit power of the overall PERC cell drops by 10.8%. This is a significant cost saving and thus energy policies are reviewed to overcome challenges to accelerating deployment of black mc-Si PERC across the PV industry.http://www.mdpi.com/1996-1073/11/9/2337black siliconeconomicsmanufacturing costsmulticrystalline siliconpassivated emitter rear cellPERCsilicon solar cellsphotovoltaicphotovoltaic manufacturing |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chiara Modanese Hannu S. Laine Toni P. Pasanen Hele Savin Joshua M. Pearce |
spellingShingle |
Chiara Modanese Hannu S. Laine Toni P. Pasanen Hele Savin Joshua M. Pearce Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing Energies black silicon economics manufacturing costs multicrystalline silicon passivated emitter rear cell PERC silicon solar cells photovoltaic photovoltaic manufacturing |
author_facet |
Chiara Modanese Hannu S. Laine Toni P. Pasanen Hele Savin Joshua M. Pearce |
author_sort |
Chiara Modanese |
title |
Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing |
title_short |
Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing |
title_full |
Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing |
title_fullStr |
Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing |
title_full_unstemmed |
Economic Advantages of Dry-Etched Black Silicon in Passivated Emitter Rear Cell (PERC) Photovoltaic Manufacturing |
title_sort |
economic advantages of dry-etched black silicon in passivated emitter rear cell (perc) photovoltaic manufacturing |
publisher |
MDPI AG |
series |
Energies |
issn |
1996-1073 |
publishDate |
2018-09-01 |
description |
Industrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and may prevent power conversion efficiency degradation under light exposure. Black-Si allows a potential for >20% PERC cells using cheaper multicrystalline silicon (mc-Si) materials, although dry-etching is widely considered too expensive for industrial application. This study analyzes this economic potential by comparing costs of standard texturized Cz-Si and black mc-Si PERC cells. Manufacturing sequences are divided into steps, and costs per unit power are individually calculated for all different steps. Baseline costs for each step are calculated and a sensitivity analysis run for a theoretical 1 GW/year manufacturing plant, combining data from literature and industry. The results show an increase in the overall cell processing costs between 15.8% and 25.1% due to the combination of black-Si etching and passivation by double-sided atomic layer deposition. Despite this increase, the cost per unit power of the overall PERC cell drops by 10.8%. This is a significant cost saving and thus energy policies are reviewed to overcome challenges to accelerating deployment of black mc-Si PERC across the PV industry. |
topic |
black silicon economics manufacturing costs multicrystalline silicon passivated emitter rear cell PERC silicon solar cells photovoltaic photovoltaic manufacturing |
url |
http://www.mdpi.com/1996-1073/11/9/2337 |
work_keys_str_mv |
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