Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial stra...

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Main Authors:	Xinmao Yin, Qixing Wang, Liang Cao, Chi Sin Tang, Xin Luo, Yujie Zheng, Lai Mun Wong, Shi Jie Wang, Su Ying Quek, Wenjing Zhang, Andrivo Rusydi, Andrew T. S. Wee
Format:	Article
Language:	English
Published:	Nature Publishing Group 2017-09-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-017-00640-2

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spelling	doaj-e951112d3ef44fc7a3f94bc9cbbe1a5a2021-05-11T07:44:03ZengNature Publishing GroupNature Communications2041-17232017-09-01811910.1038/s41467-017-00640-2Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice couplingXinmao Yin0Qixing Wang1Liang Cao2Chi Sin Tang3Xin Luo4Yujie Zheng5Lai Mun Wong6Shi Jie Wang7Su Ying Quek8Wenjing Zhang9Andrivo Rusydi10Andrew T. S. Wee11SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityDepartment of Physics, Faculty of Science, National University of SingaporeDepartment of Physics, Faculty of Science, National University of SingaporeDepartment of Physics, Faculty of Science, National University of SingaporeDepartment of Physics, Faculty of Science, National University of SingaporeDepartment of Physics, Faculty of Science, National University of SingaporeInstitute of Materials Research and Engineering (IMRE), ASTAR (Agency for Science, Technology and Research)Institute of Materials Research and Engineering (IMRE), ASTAR (Agency for Science, Technology and Research)Department of Physics, Faculty of Science, National University of SingaporeSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityDepartment of Physics, Faculty of Science, National University of SingaporeDepartment of Physics, Faculty of Science, National University of SingaporeMoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.https://doi.org/10.1038/s41467-017-00640-2
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee
spellingShingle	Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling Nature Communications
author_facet	Xinmao Yin Qixing Wang Liang Cao Chi Sin Tang Xin Luo Yujie Zheng Lai Mun Wong Shi Jie Wang Su Ying Quek Wenjing Zhang Andrivo Rusydi Andrew T. S. Wee
author_sort	Xinmao Yin
title	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_short	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_full	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_fullStr	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_full_unstemmed	Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling
title_sort	tunable inverted gap in monolayer quasi-metallic mos2 induced by strong charge-lattice coupling
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2017-09-01
description	MoS2 exhibits multiple electronic properties associated with different crystal structures. Here, the authors observe inverted and fundamental gaps through a designed annealing-based strategy, to induce a semiconductor-to-metal phase transition in monolayer-MoS2 on Au, facilitated by interfacial strain and electron transfer from Au to MoS2.
url	https://doi.org/10.1038/s41467-017-00640-2
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Tunable inverted gap in monolayer quasi-metallic MoS2 induced by strong charge-lattice coupling

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