Semi-insulating GaAs surface modifications and their influence in the response of THz devices

Semi-insulating GaAs surface modifications and their influence in the response of THz devices

In this work, we use the Metal-Assisted Chemical Etching (MACE) technique together with an NH3 plasma treatment using a Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) equipment to modify the surface of semi-insulating GaAs (SI-GaAs) substrates. Using our modified SI-GaAs, we fabricate pho...

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Bibliographic Details
Main Authors: A.L. Muñoz-Rosas, N. Qureshi, G. Paz-Martínez, C.G. Treviño-Palacios, J.C. Alonso-Huitrón, A. Rodríguez-Gómez
Format: Article
Language:English
Published: Elsevier 2021-05-01
Series:Results in Physics
Subjects:
MACE technique
GaAs nanostructuration
Photoconductive antennas
THz emission
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721002527

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http://www.sciencedirect.com/science/article/pii/S2211379721002527

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