Semi-insulating GaAs surface modifications and their influence in the response of THz devices
In this work, we use the Metal-Assisted Chemical Etching (MACE) technique together with an NH3 plasma treatment using a Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) equipment to modify the surface of semi-insulating GaAs (SI-GaAs) substrates. Using our modified SI-GaAs, we fabricate pho...
Main Authors: | A.L. Muñoz-Rosas, N. Qureshi, G. Paz-Martínez, C.G. Treviño-Palacios, J.C. Alonso-Huitrón, A. Rodríguez-Gómez |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2021-05-01
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Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379721002527 |
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