TCAD Analysis of the Four-Terminal Poly-Si TFTs on Suppression Mechanisms of the DC and AC Hot-Carrier Degradation
Four-terminal poly-Si thin-film transistors (TFTs), with a counter-doped body terminal connected to the floating channel, can suppress both dc and dynamic hot-carrier (HC) degradation of TFTs. With 3-D TCAD simulation, we clarify the underlying mechanisms of the suppression effect and analyze its de...
Main Authors: | Ting Gao, Mingxiang Wang, Huaisheng Wang, Dongli Zhang |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8714035/ |
Similar Items
-
Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress
by: Aminzadeh, Payman G.
Published: (2013) -
Quantifying the Plasmonic Generation Rate of Non‐Thermal Hot Carriers with an AlGaN/GaN High‐Electron‐Mobility Transistor
by: Chun‐Yu Li, et al.
Published: (2021-07-01) -
Hot electron effects in N-channel MOSFET's
by: Or, Siu-shun Burnette
Published: (2013) -
TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power
by: Rana Mahmoud, et al.
Published: (2019-09-01) -
A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination
by: Shuai Li, et al.
Published: (2019-01-01)