Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
In this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DU...
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doaj-eb9b8ca45ab940f29e764ae7ca8369d52021-06-11T23:00:04ZengIEEEIEEE Photonics Journal1943-06552021-01-0113311110.1109/JPHOT.2021.30847529444127Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting DiodesHongchang Tao0https://orcid.org/0000-0002-9406-056XShengrui Xu1Xiaomeng Fan2Jincheng Zhang3https://orcid.org/0000-0001-7332-6704Yue Hao4State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaIn this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DUV LED is boosted by 104% at 60 mA with the same structure of Ga-polar conventional DUV LED. Furthermore, the higher operation voltage of N-polar DUV LED induced by the large energy difference between the p-type interlayer and the p-GaN hole supplier is noted. To reduce the operation voltage of N-polar DUV LED, the structure with a staircase-like p-type interlayer is proposed. The incorporation of staircase-like aluminum composition p-type interlayer mitigates the large potential barrier for holes injection, and the operation voltage is comparable to the Ga-polar DUV LED. The reduced operation voltage further promotes the WPE of N-polar DUV LEDs. Thus, combined with the promoted electron blocking ability and the mitigated potential barrier for holes of N-polar DUV LED, the greatly enhanced WPE is as high as 4.9% at 60 mA, which is 2.88 times higher than the Ga-polar DUV LED.https://ieeexplore.ieee.org/document/9444127/Light-emitting diodes (LEDs)Deep-ultraviolet (DUV)N-polar |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hongchang Tao Shengrui Xu Xiaomeng Fan Jincheng Zhang Yue Hao |
spellingShingle |
Hongchang Tao Shengrui Xu Xiaomeng Fan Jincheng Zhang Yue Hao Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes IEEE Photonics Journal Light-emitting diodes (LEDs) Deep-ultraviolet (DUV) N-polar |
author_facet |
Hongchang Tao Shengrui Xu Xiaomeng Fan Jincheng Zhang Yue Hao |
author_sort |
Hongchang Tao |
title |
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes |
title_short |
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes |
title_full |
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes |
title_fullStr |
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes |
title_full_unstemmed |
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes |
title_sort |
greatly enhanced wall-plug efficiency of n-polar algan-based deep ultraviolet light-emitting diodes |
publisher |
IEEE |
series |
IEEE Photonics Journal |
issn |
1943-0655 |
publishDate |
2021-01-01 |
description |
In this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DUV LED is boosted by 104% at 60 mA with the same structure of Ga-polar conventional DUV LED. Furthermore, the higher operation voltage of N-polar DUV LED induced by the large energy difference between the p-type interlayer and the p-GaN hole supplier is noted. To reduce the operation voltage of N-polar DUV LED, the structure with a staircase-like p-type interlayer is proposed. The incorporation of staircase-like aluminum composition p-type interlayer mitigates the large potential barrier for holes injection, and the operation voltage is comparable to the Ga-polar DUV LED. The reduced operation voltage further promotes the WPE of N-polar DUV LEDs. Thus, combined with the promoted electron blocking ability and the mitigated potential barrier for holes of N-polar DUV LED, the greatly enhanced WPE is as high as 4.9% at 60 mA, which is 2.88 times higher than the Ga-polar DUV LED. |
topic |
Light-emitting diodes (LEDs) Deep-ultraviolet (DUV) N-polar |
url |
https://ieeexplore.ieee.org/document/9444127/ |
work_keys_str_mv |
AT hongchangtao greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes AT shengruixu greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes AT xiaomengfan greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes AT jinchengzhang greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes AT yuehao greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes |
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1721381810838962176 |