Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

In this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DU...

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Main Authors: Hongchang Tao, Shengrui Xu, Xiaomeng Fan, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9444127/
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spelling doaj-eb9b8ca45ab940f29e764ae7ca8369d52021-06-11T23:00:04ZengIEEEIEEE Photonics Journal1943-06552021-01-0113311110.1109/JPHOT.2021.30847529444127Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting DiodesHongchang Tao0https://orcid.org/0000-0002-9406-056XShengrui Xu1Xiaomeng Fan2Jincheng Zhang3https://orcid.org/0000-0001-7332-6704Yue Hao4State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, ChinaIn this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DUV LED is boosted by 104% at 60 mA with the same structure of Ga-polar conventional DUV LED. Furthermore, the higher operation voltage of N-polar DUV LED induced by the large energy difference between the p-type interlayer and the p-GaN hole supplier is noted. To reduce the operation voltage of N-polar DUV LED, the structure with a staircase-like p-type interlayer is proposed. The incorporation of staircase-like aluminum composition p-type interlayer mitigates the large potential barrier for holes injection, and the operation voltage is comparable to the Ga-polar DUV LED. The reduced operation voltage further promotes the WPE of N-polar DUV LEDs. Thus, combined with the promoted electron blocking ability and the mitigated potential barrier for holes of N-polar DUV LED, the greatly enhanced WPE is as high as 4.9% at 60 mA, which is 2.88 times higher than the Ga-polar DUV LED.https://ieeexplore.ieee.org/document/9444127/Light-emitting diodes (LEDs)Deep-ultraviolet (DUV)N-polar
collection DOAJ
language English
format Article
sources DOAJ
author Hongchang Tao
Shengrui Xu
Xiaomeng Fan
Jincheng Zhang
Yue Hao
spellingShingle Hongchang Tao
Shengrui Xu
Xiaomeng Fan
Jincheng Zhang
Yue Hao
Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
IEEE Photonics Journal
Light-emitting diodes (LEDs)
Deep-ultraviolet (DUV)
N-polar
author_facet Hongchang Tao
Shengrui Xu
Xiaomeng Fan
Jincheng Zhang
Yue Hao
author_sort Hongchang Tao
title Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
title_short Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
title_full Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
title_fullStr Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
title_full_unstemmed Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
title_sort greatly enhanced wall-plug efficiency of n-polar algan-based deep ultraviolet light-emitting diodes
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2021-01-01
description In this work, we numerically investigate the N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) over the Ga-polar DUV LEDs. The light output power has increased from 7.1 mW of Ga-polar DUV LED to 18.8 mW of N-polar DUV LED at 60 mA, and the wall-plug efficiency (WPE) of N-polar DUV LED is boosted by 104% at 60 mA with the same structure of Ga-polar conventional DUV LED. Furthermore, the higher operation voltage of N-polar DUV LED induced by the large energy difference between the p-type interlayer and the p-GaN hole supplier is noted. To reduce the operation voltage of N-polar DUV LED, the structure with a staircase-like p-type interlayer is proposed. The incorporation of staircase-like aluminum composition p-type interlayer mitigates the large potential barrier for holes injection, and the operation voltage is comparable to the Ga-polar DUV LED. The reduced operation voltage further promotes the WPE of N-polar DUV LEDs. Thus, combined with the promoted electron blocking ability and the mitigated potential barrier for holes of N-polar DUV LED, the greatly enhanced WPE is as high as 4.9% at 60 mA, which is 2.88 times higher than the Ga-polar DUV LED.
topic Light-emitting diodes (LEDs)
Deep-ultraviolet (DUV)
N-polar
url https://ieeexplore.ieee.org/document/9444127/
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AT xiaomengfan greatlyenhancedwallplugefficiencyofnpolaralganbaseddeepultravioletlightemittingdiodes
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