Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices

Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices

We demonstrate thermally assisted hopping (TAH) as an appropriate carrier transport model for CH3NH3PbI3 resistive memories. Organic semiconductors, including organic-inorganic hybrid perovskites, have been previously speculated to follow the space-charge-limited conduction (SCLC) model. However, th...

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Main Authors: Nayoung Park, Yongwoo Kwon, Jaeho Choi, Ho Won Jang, Pil-Ryung Cha
Format: Article
Language:English
Published: AIP Publishing LLC 2018-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5019459
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spelling doaj-ebb0ccad531a4ee8a5de2431639b65be2020-11-25T00:10:52ZengAIP Publishing LLCAIP Advances2158-32262018-04-0184045205045205-710.1063/1.5019459012804ADVPlausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devicesNayoung Park0Yongwoo Kwon1Jaeho Choi2Ho Won Jang3Pil-Ryung Cha4School of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of KoreaDepartment of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of KoreaSchool of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of KoreaWe demonstrate thermally assisted hopping (TAH) as an appropriate carrier transport model for CH3NH3PbI3 resistive memories. Organic semiconductors, including organic-inorganic hybrid perovskites, have been previously speculated to follow the space-charge-limited conduction (SCLC) model. However, the SCLC model cannot reproduce the temperature dependence of experimental current-voltage curves. Instead, the TAH model with temperature-dependent trap densities and a constant trap level are demonstrated to well reproduce the experimental results.http://dx.doi.org/10.1063/1.5019459
collection DOAJ
language English
format Article
sources DOAJ
author Nayoung Park
Yongwoo Kwon
Jaeho Choi
Ho Won Jang
Pil-Ryung Cha
spellingShingle Nayoung Park
Yongwoo Kwon
Jaeho Choi
Ho Won Jang
Pil-Ryung Cha
Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
AIP Advances
author_facet Nayoung Park
Yongwoo Kwon
Jaeho Choi
Ho Won Jang
Pil-Ryung Cha
author_sort Nayoung Park
title Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
title_short Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
title_full Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
title_fullStr Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
title_full_unstemmed Plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
title_sort plausible carrier transport model in organic-inorganic hybrid perovskite resistive memory devices
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-04-01
description We demonstrate thermally assisted hopping (TAH) as an appropriate carrier transport model for CH3NH3PbI3 resistive memories. Organic semiconductors, including organic-inorganic hybrid perovskites, have been previously speculated to follow the space-charge-limited conduction (SCLC) model. However, the SCLC model cannot reproduce the temperature dependence of experimental current-voltage curves. Instead, the TAH model with temperature-dependent trap densities and a constant trap level are demonstrated to well reproduce the experimental results.
url http://dx.doi.org/10.1063/1.5019459
work_keys_str_mv AT nayoungpark plausiblecarriertransportmodelinorganicinorganichybridperovskiteresistivememorydevices
AT yongwookwon plausiblecarriertransportmodelinorganicinorganichybridperovskiteresistivememorydevices
AT jaehochoi plausiblecarriertransportmodelinorganicinorganichybridperovskiteresistivememorydevices
AT howonjang plausiblecarriertransportmodelinorganicinorganichybridperovskiteresistivememorydevices
AT pilryungcha plausiblecarriertransportmodelinorganicinorganichybridperovskiteresistivememorydevices
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