Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
<p>Abstract</p> <p>In-situ annealing at a high temperature of 640°C was performed for a low temperature grown Si capping layer, which was grown at 300°C on SiGe self-assembled quantum dots with a thickness of 50 nm. Square nanopits, with a depth of about 8 nm and...
Main Authors: | Cui Jian, Lin Jian, Wu Yue, Fan Yong, Zhong Zhenyang, Yang Xin, Jiang Zui |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://www.nanoscalereslett.com/content/6/1/59 |
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