Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole con...

Full description

Bibliographic Details
Main Authors:	Ying Zhao, Shengrui Xu, Hongchang Tao, Yachao Zhang, Chunfu Zhang, Lansheng Feng, Ruoshi Peng, Xiaomeng Fan, Jinjuan Du, Jincheng Zhang, Yue Hao
Format:	Article
Language:	English
Published:	MDPI AG 2021-12-01
Series:	Materials
Subjects:	GaN p-conductivity superlattice delta doping LED
Online Access:	https://www.mdpi.com/1996-1944/14/1/144

id	doaj-ebd4be9123de4d5d9e2ad0e46d49a0c1
record_format	Article
spelling	doaj-ebd4be9123de4d5d9e2ad0e46d49a0c12021-01-01T00:00:45ZengMDPI AGMaterials1996-19442021-12-011414414410.3390/ma14010144Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice StructureYing Zhao0Shengrui Xu1Hongchang Tao2Yachao Zhang3Chunfu Zhang4Lansheng Feng5Ruoshi Peng6Xiaomeng Fan7Jinjuan Du8Jincheng Zhang9Yue Hao10Wide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaSchool of Mechanical-Electrical Engineering, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaWide Band-Gap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, ChinaA method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.https://www.mdpi.com/1996-1944/14/1/144GaNp-conductivitysuperlatticedelta dopingLED
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao
spellingShingle	Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure Materials GaN p-conductivity superlattice delta doping LED
author_facet	Ying Zhao Shengrui Xu Hongchang Tao Yachao Zhang Chunfu Zhang Lansheng Feng Ruoshi Peng Xiaomeng Fan Jinjuan Du Jincheng Zhang Yue Hao
author_sort	Ying Zhao
title	Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
title_short	Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
title_full	Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
title_fullStr	Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
title_full_unstemmed	Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
title_sort	enhanced p-type gan conductivity by mg delta doped algan/gan superlattice structure
publisher	MDPI AG
series	Materials
issn	1996-1944
publishDate	2021-12-01
description	A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.
topic	GaN p-conductivity superlattice delta doping LED
url	https://www.mdpi.com/1996-1944/14/1/144
work_keys_str_mv	AT yingzhao enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT shengruixu enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT hongchangtao enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT yachaozhang enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT chunfuzhang enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT lanshengfeng enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT ruoshipeng enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT xiaomengfan enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT jinjuandu enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT jinchengzhang enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure AT yuehao enhancedptypeganconductivitybymgdeltadopedalgangansuperlatticestructure
_version_	1724364714502258688

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Similar Items