Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions

Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions

Mathematical modelling of fluorine ion implantation process is carried out by using the SRIM-2008 program for the determination of quantitative characteristics of the radiation defect formation in the gadolinium–gallium garnet (GGG). The crystal depth distributions are measured for elastic and inela...

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Main Author: V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
Format: Article
Language:English
Published: G. V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine 2014-09-01
Series:Успехи физики металлов
Online Access:https://doi.org/10.15407/ufm.15.03.121
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spelling doaj-ed6dd8d2024e42acb45efed3bc3d6a252020-11-25T02:46:57ZengG. V. Kurdyumov Institute for Metal Physics of the N.A.S. of UkraineУспехи физики металлов 1608-10212617-07952014-09-01153121143https://doi.org/10.15407/ufm.15.03.121Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ IonsV. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. KochelabMathematical modelling of fluorine ion implantation process is carried out by using the SRIM-2008 program for the determination of quantitative characteristics of the radiation defect formation in the gadolinium–gallium garnet (GGG). The crystal depth distributions are measured for elastic and inelastic energy losses of both the implanted F+ ion with 90 keV energy and the displaced matrix ions due to their slowing-down in the GGG crystal. Depth distribution profiles are obtained for quantities of implanted and displaced ions. The damage pattern and its quantitative characteristics are determined. Structural changes caused by fluorine ion implantation in a surface layer of the GGG single crystal are investigated by an X-ray diffraction technique. The shape of the strain profile in the implanted layer and relationships of its characteristics with the simulation results are determined.https://doi.org/10.15407/ufm.15.03.121
collection DOAJ
language English
format Article
sources DOAJ
author V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
spellingShingle V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
Успехи физики металлов
author_facet V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
author_sort V. O. Kotsyubyns’kyy, V. M. Pylypiv, B. K. Ostafiychuk, I. P. Yaremiy, O. Z. Garpul’, S. J. Olikhovskyy, O. S. Skakunova, V. B. Molodkin, Ye. M. Kyslovs’kyy, T. P. Vladimirova, O. V. Reshetnyk, Ye. V. Kochelab
title Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
title_short Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
title_full Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
title_fullStr Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
title_full_unstemmed Modelling and Diagnostics of Damages and Strains in a Crystal of Gd3Ga5O12 After Implantation of F+ Ions
title_sort modelling and diagnostics of damages and strains in a crystal of gd3ga5o12 after implantation of f+ ions
publisher G. V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine
series Успехи физики металлов
issn 1608-1021
2617-0795
publishDate 2014-09-01
description Mathematical modelling of fluorine ion implantation process is carried out by using the SRIM-2008 program for the determination of quantitative characteristics of the radiation defect formation in the gadolinium–gallium garnet (GGG). The crystal depth distributions are measured for elastic and inelastic energy losses of both the implanted F+ ion with 90 keV energy and the displaced matrix ions due to their slowing-down in the GGG crystal. Depth distribution profiles are obtained for quantities of implanted and displaced ions. The damage pattern and its quantitative characteristics are determined. Structural changes caused by fluorine ion implantation in a surface layer of the GGG single crystal are investigated by an X-ray diffraction technique. The shape of the strain profile in the implanted layer and relationships of its characteristics with the simulation results are determined.
url https://doi.org/10.15407/ufm.15.03.121
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