Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 μm<sup>2</sup>, fabricated on a 400-nm silicon-on-insulator platform, requiring only a single...

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Main Authors:	Jia Xu Brian Sia, Wanjun Wang, Xin Guo, Jin Zhou, Zecen Zhang, Mohamed Said Rouifed, Xiang Li, Zhong Liang Qiao, Chong Yang Liu, Callum Littlejohns, Graham T. Reed, Hong Wang
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Photonics Journal
Subjects:	Waveguides mid infrared photonic integrated circuits silicon photonics
Online Access:	https://ieeexplore.ieee.org/document/8688691/

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spelling	doaj-eeaf35020f934d55bd732aa413e3255d2021-04-05T16:54:41ZengIEEEIEEE Photonics Journal1943-06552019-01-0111211110.1109/JPHOT.2019.29077888688691Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode EvolutionJia Xu Brian Sia0Wanjun Wang1Xin Guo2Jin Zhou3Zecen Zhang4Mohamed Said Rouifed5Xiang Li6Zhong Liang Qiao7Chong Yang Liu8https://orcid.org/0000-0001-8045-2944Callum Littlejohns9Graham T. Reed10Hong Wang11https://orcid.org/0000-0002-2183-6865Novitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeNovitas, Silicon Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, SingaporeWe designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 μm<sup>2</sup>, fabricated on a 400-nm silicon-on-insulator platform, requiring only a single etch step. The optimization process and the conditions for arbitrary-power splitting are performed using three-dimensional-FDTD simulations. We prove this concept through the fabrication of asymmetrical adiabatic evolution-based power splitters with splitting ratios of 50:50, 60:40, and 70:30. The fabricated devices are shown to agree closely with simulation results. Broadband operation with low insertion loss of 0.11-0.6 dB is demonstrated across the 3.66-3.89 μm wavelength range (230 nm). This component has applications in a multitude of areas such as spectroscopic optical sensing and optical phased arrays photonic integrated circuits etc.https://ieeexplore.ieee.org/document/8688691/Waveguidesmid infraredphotonic integrated circuitssilicon photonics
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jia Xu Brian Sia Wanjun Wang Xin Guo Jin Zhou Zecen Zhang Mohamed Said Rouifed Xiang Li Zhong Liang Qiao Chong Yang Liu Callum Littlejohns Graham T. Reed Hong Wang
spellingShingle	Jia Xu Brian Sia Wanjun Wang Xin Guo Jin Zhou Zecen Zhang Mohamed Said Rouifed Xiang Li Zhong Liang Qiao Chong Yang Liu Callum Littlejohns Graham T. Reed Hong Wang Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution IEEE Photonics Journal Waveguides mid infrared photonic integrated circuits silicon photonics
author_facet	Jia Xu Brian Sia Wanjun Wang Xin Guo Jin Zhou Zecen Zhang Mohamed Said Rouifed Xiang Li Zhong Liang Qiao Chong Yang Liu Callum Littlejohns Graham T. Reed Hong Wang
author_sort	Jia Xu Brian Sia
title	Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution
title_short	Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution
title_full	Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution
title_fullStr	Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution
title_full_unstemmed	Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution
title_sort	mid-infrared, ultra-broadband, low-loss, compact arbitrary power splitter based on adiabatic mode evolution
publisher	IEEE
series	IEEE Photonics Journal
issn	1943-0655
publishDate	2019-01-01
description	We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The power splitters are designed with a footprint of smaller than 12 × 2.9 μm<sup>2</sup>, fabricated on a 400-nm silicon-on-insulator platform, requiring only a single etch step. The optimization process and the conditions for arbitrary-power splitting are performed using three-dimensional-FDTD simulations. We prove this concept through the fabrication of asymmetrical adiabatic evolution-based power splitters with splitting ratios of 50:50, 60:40, and 70:30. The fabricated devices are shown to agree closely with simulation results. Broadband operation with low insertion loss of 0.11-0.6 dB is demonstrated across the 3.66-3.89 μm wavelength range (230 nm). This component has applications in a multitude of areas such as spectroscopic optical sensing and optical phased arrays photonic integrated circuits etc.
topic	Waveguides mid infrared photonic integrated circuits silicon photonics
url	https://ieeexplore.ieee.org/document/8688691/
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Mid-Infrared, Ultra-Broadband, Low-Loss, Compact Arbitrary Power Splitter Based on Adiabatic Mode Evolution

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