Radiation Defects in Heterostructures 3C-SiC/4H-SiC
The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-02-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/9/2/115 |
| id |
doaj-eef5d0b6adb24a3a881e5a1781e8c20b |
|---|---|
| record_format |
Article |
| spelling |
doaj-eef5d0b6adb24a3a881e5a1781e8c20b2020-11-25T01:14:20ZengMDPI AGCrystals2073-43522019-02-019211510.3390/cryst9020115cryst9020115Radiation Defects in Heterostructures 3C-SiC/4H-SiCA.A. Lebedev0G.A. Oganesyan1V.V. Kozlovski2I.A. Eliseyev3P.V. Bulat4Ioffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, RussiaIoffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, RussiaPeter the Great St. Petersburg State Polytechnic University, St. Petersburg 195251, RussiaIoffe Institute, Politekhnicheskaya 26, St. Petersburg 194021, RussiaLaboratory of Mechanic and Energy Systems, ITMO University, St. Petersburg 197101, RussiaThe effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm<sup>−1</sup>, which is close to Vd in 4<i>H</i>-SiC. Compared with 4<i>H</i> and 6<i>H</i> silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3<i>C</i>-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes.https://www.mdpi.com/2073-4352/9/2/115sublimation epitaxy3C-SiCproton irradiationstructural defectsphotoluminescenceHall effectRaman spectroscopy |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
A.A. Lebedev G.A. Oganesyan V.V. Kozlovski I.A. Eliseyev P.V. Bulat |
| spellingShingle |
A.A. Lebedev G.A. Oganesyan V.V. Kozlovski I.A. Eliseyev P.V. Bulat Radiation Defects in Heterostructures 3C-SiC/4H-SiC Crystals sublimation epitaxy 3C-SiC proton irradiation structural defects photoluminescence Hall effect Raman spectroscopy |
| author_facet |
A.A. Lebedev G.A. Oganesyan V.V. Kozlovski I.A. Eliseyev P.V. Bulat |
| author_sort |
A.A. Lebedev |
| title |
Radiation Defects in Heterostructures 3C-SiC/4H-SiC |
| title_short |
Radiation Defects in Heterostructures 3C-SiC/4H-SiC |
| title_full |
Radiation Defects in Heterostructures 3C-SiC/4H-SiC |
| title_fullStr |
Radiation Defects in Heterostructures 3C-SiC/4H-SiC |
| title_full_unstemmed |
Radiation Defects in Heterostructures 3C-SiC/4H-SiC |
| title_sort |
radiation defects in heterostructures 3c-sic/4h-sic |
| publisher |
MDPI AG |
| series |
Crystals |
| issn |
2073-4352 |
| publishDate |
2019-02-01 |
| description |
The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It was found that the carrier removal rate (Vd) in 3C-SiC is ~100 cm<sup>−1</sup>, which is close to Vd in 4<i>H</i>-SiC. Compared with 4<i>H</i> and 6<i>H</i> silicon carbide, no significant increase in the intensity of the so-called defect-related photoluminescence was observed. An assumption is made that radiation-induced compensation processes in 3<i>C</i>-SiC are affected by structural defects (twin boundaries), which are always present in epitaxial cubic silicon carbide layers grown on substrates of the hexagonal polytypes. |
| topic |
sublimation epitaxy 3C-SiC proton irradiation structural defects photoluminescence Hall effect Raman spectroscopy |
| url |
https://www.mdpi.com/2073-4352/9/2/115 |
| work_keys_str_mv |
AT aalebedev radiationdefectsinheterostructures3csic4hsic AT gaoganesyan radiationdefectsinheterostructures3csic4hsic AT vvkozlovski radiationdefectsinheterostructures3csic4hsic AT iaeliseyev radiationdefectsinheterostructures3csic4hsic AT pvbulat radiationdefectsinheterostructures3csic4hsic |
| _version_ |
1725157345894334464 |