High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer

High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer

Photovoltaic devices with perovskite materials as light absorbing material were fabricated through sequential vapor deposition of lead iodide and methylammonium iodide with undoped poly3hexylthiophene (P3HT) as a hole transporting layer. The sequential vapor deposition process produced...

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Main Authors: Hisham A. Abbas, Ranjith Kottokkaran, Balaji Ganapathy, Mehran Samiee, Liang Zhang, Andrew Kitahara, Max Noack, Vikram L. Dalal
Format: Article
Language:English
Published: AIP Publishing LLC 2015-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4905932
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spelling doaj-ef03b87797a74877abc62b753d28dda82020-11-24T21:22:30ZengAIP Publishing LLCAPL Materials2166-532X2015-01-0131016105016105-710.1063/1.4905932006501APMHigh efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layerHisham A. Abbas0Ranjith Kottokkaran1Balaji Ganapathy2Mehran Samiee3Liang Zhang4Andrew Kitahara5Max Noack6Vikram L. Dalal7Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011-3060, USAMicroelectronics Research Center, Iowa State University, Ames, Iowa 50011-3060, USAMicroelectronics Research Center, Iowa State University, Ames, Iowa 50011-3060, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011-3060, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011-3060, USA Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011-3060, USAMicroelectronics Research Center, Iowa State University, Ames, Iowa 50011-3060, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011-3060, USA Photovoltaic devices with perovskite materials as light absorbing material were fabricated through sequential vapor deposition of lead iodide and methylammonium iodide with undoped poly3hexylthiophene (P3HT) as a hole transporting layer. The sequential vapor deposition process produced films and devices with the large grains and low defect densities, very small values of dark current, and high open circuit voltages. The thickness of the P3HT layer was a critical parameter for achieving high solar conversion efficiencies of 13.7%. The vapor deposition process also produced devices with a tight distribution of performance characteristics and very high open circuit voltages (0.99 V). http://dx.doi.org/10.1063/1.4905932
collection DOAJ
language English
format Article
sources DOAJ
author Hisham A. Abbas
Ranjith Kottokkaran
Balaji Ganapathy
Mehran Samiee
Liang Zhang
Andrew Kitahara
Max Noack
Vikram L. Dalal
spellingShingle Hisham A. Abbas
Ranjith Kottokkaran
Balaji Ganapathy
Mehran Samiee
Liang Zhang
Andrew Kitahara
Max Noack
Vikram L. Dalal
High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
APL Materials
author_facet Hisham A. Abbas
Ranjith Kottokkaran
Balaji Ganapathy
Mehran Samiee
Liang Zhang
Andrew Kitahara
Max Noack
Vikram L. Dalal
author_sort Hisham A. Abbas
title High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
title_short High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
title_full High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
title_fullStr High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
title_full_unstemmed High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer
title_sort high efficiency sequentially vapor grown n-i-p ch3nh3pbi3 perovskite solar cells with undoped p3ht as p-type heterojunction layer
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2015-01-01
description Photovoltaic devices with perovskite materials as light absorbing material were fabricated through sequential vapor deposition of lead iodide and methylammonium iodide with undoped poly3hexylthiophene (P3HT) as a hole transporting layer. The sequential vapor deposition process produced films and devices with the large grains and low defect densities, very small values of dark current, and high open circuit voltages. The thickness of the P3HT layer was a critical parameter for achieving high solar conversion efficiencies of 13.7%. The vapor deposition process also produced devices with a tight distribution of performance characteristics and very high open circuit voltages (0.99 V).
url http://dx.doi.org/10.1063/1.4905932
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