A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measureme...
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MDPI AG
2021-07-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/14/1654 |
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doaj-ef06a53157fd40d3bd8d7178463b453e2021-07-23T13:38:05ZengMDPI AGElectronics2079-92922021-07-01101654165410.3390/electronics10141654A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT ProcessYanfei Hou0Weihua Yu1Qin Yu2Bowu Wang3Yan Sun4Wei Cheng5Ming Zhou6Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, ChinaBeijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, ChinaMonolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, ChinaMonolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, ChinaDepartment of Microwave Module Circuit, Nanjing Electronic Devices Institute, Nanjing 210016, ChinaThis paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm<sup>2</sup>, including DC and RF pads.https://www.mdpi.com/2079-9292/10/14/1654broadband amplifiersdouble-heterojunction bipolar transistor (DHBT)indium phosphide (InP) |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Yanfei Hou Weihua Yu Qin Yu Bowu Wang Yan Sun Wei Cheng Ming Zhou |
| spellingShingle |
Yanfei Hou Weihua Yu Qin Yu Bowu Wang Yan Sun Wei Cheng Ming Zhou A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process Electronics broadband amplifiers double-heterojunction bipolar transistor (DHBT) indium phosphide (InP) |
| author_facet |
Yanfei Hou Weihua Yu Qin Yu Bowu Wang Yan Sun Wei Cheng Ming Zhou |
| author_sort |
Yanfei Hou |
| title |
A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process |
| title_short |
A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process |
| title_full |
A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process |
| title_fullStr |
A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process |
| title_full_unstemmed |
A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process |
| title_sort |
56–161 ghz common-emitter amplifier with 16.5 db gain based on inp dhbt process |
| publisher |
MDPI AG |
| series |
Electronics |
| issn |
2079-9292 |
| publishDate |
2021-07-01 |
| description |
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm<sup>2</sup>, including DC and RF pads. |
| topic |
broadband amplifiers double-heterojunction bipolar transistor (DHBT) indium phosphide (InP) |
| url |
https://www.mdpi.com/2079-9292/10/14/1654 |
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