A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measureme...

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Bibliographic Details
Main Authors: Yanfei Hou, Weihua Yu, Qin Yu, Bowu Wang, Yan Sun, Wei Cheng, Ming Zhou
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/10/14/1654

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