Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low gr...
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AIP Publishing LLC
2016-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4943511 |
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doaj-efc7f18ef0514e1098b7c7ec08caedcc2020-11-24T22:39:55ZengAIP Publishing LLCAIP Advances2158-32262016-03-0163035303035303-610.1063/1.4943511012603ADVReal-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffractionHidetoshi Suzuki0Yuka Nakata1Masamitu Takahasi2Kazuma Ikeda3Yoshio Ohshita4Osamu Morohara5Hirotaka Geka6Yoshitaka Moriyasu7Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192, JapanGraduate School of Materials Science, University of Hyogo, 3-2-1 Koto, Kamigori-cho, Hyogo 678-1297, JapanGraduate School of Materials Science, University of Hyogo, 3-2-1 Koto, Kamigori-cho, Hyogo 678-1297, JapanToyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, JapanAdvanced Devices and Sensor Systems Development Center, Asahi Kasei Co. Ltd., 2-1 Samejima, Fuji 416-8501, JapanAdvanced Devices and Sensor Systems Development Center, Asahi Kasei Co. Ltd., 2-1 Samejima, Fuji 416-8501, JapanAdvanced Devices and Sensor Systems Development Center, Asahi Kasei Co. Ltd., 2-1 Samejima, Fuji 416-8501, JapanAdvanced Devices and Sensor Systems Development Center, Asahi Kasei Co. Ltd., 2-1 Samejima, Fuji 416-8501, JapanThe formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses.http://dx.doi.org/10.1063/1.4943511 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Hidetoshi Suzuki Yuka Nakata Masamitu Takahasi Kazuma Ikeda Yoshio Ohshita Osamu Morohara Hirotaka Geka Yoshitaka Moriyasu |
| spellingShingle |
Hidetoshi Suzuki Yuka Nakata Masamitu Takahasi Kazuma Ikeda Yoshio Ohshita Osamu Morohara Hirotaka Geka Yoshitaka Moriyasu Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction AIP Advances |
| author_facet |
Hidetoshi Suzuki Yuka Nakata Masamitu Takahasi Kazuma Ikeda Yoshio Ohshita Osamu Morohara Hirotaka Geka Yoshitaka Moriyasu |
| author_sort |
Hidetoshi Suzuki |
| title |
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction |
| title_short |
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction |
| title_full |
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction |
| title_fullStr |
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction |
| title_full_unstemmed |
Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction |
| title_sort |
real-time observation of rotational twin formation during molecular-beam epitaxial growth of gaas on si (111) by x-ray diffraction |
| publisher |
AIP Publishing LLC |
| series |
AIP Advances |
| issn |
2158-3226 |
| publishDate |
2016-03-01 |
| description |
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses. |
| url |
http://dx.doi.org/10.1063/1.4943511 |
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