| Summary: | Single or double diode electrical modeling of SPV module gives valuable results which will help to identify the exact behavior of SPV module under the normal operating condition. Accurate modelling of SPV module will also help to calculate internal resistances (Rs, Rsh) and parasitic of the SPV module. The main contribution of this work is the stepwise simplification of the current equation of single and double diode electrical model of SPV module. Then the single diode model of SPV module having 36 SPV cells in series is simulated in LTspice simulator. Simulated results are compared with labelled electrical parameters which shows close proximity to the labelled parameter at particular values of series and shunt resistance. This paper also presents the effect of variation in series resistance (Rs) and shunt resistance (Rsh) on the performance of the SPV module under normal operating condition. The dependency of SPV electrical parameters (Imax, Vmax, Pmax, FF, η) with the variation of series resistance (Rs) and shunt resistance (Rsh) is simulated, and the effects are discussed in details.
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