| Summary: | The effect of annealing ambient on SnO<sub>2</sub> thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO<sub>2</sub> films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO<sub>2</sub> TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm<sup>2</sup>/Vs, 0.87 V/decade, and 10<sup>7</sup>, respectively.
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