Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

The effect of annealing ambient on SnO<sub>2</sub> thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance....

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Main Authors:	Hyunjae Lee, Seunghyun Ha, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang
Format:	Article
Language:	English
Published:	MDPI AG 2019-08-01
Series:	Electronics
Subjects:	Sol-gel SnO<sub>2</sub> thin film transistor annealing ambient
Online Access:	https://www.mdpi.com/2079-9292/8/9/955

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record_format	Article
spelling	doaj-f07149d95e874b45a77b7cf080514a982020-11-24T21:28:13ZengMDPI AGElectronics2079-92922019-08-018995510.3390/electronics8090955electronics8090955Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel RouteHyunjae Lee0Seunghyun Ha1Jin-Hyuk Bae2In-Man Kang3Kwangeun Kim4Won-Yong Lee5Jaewon Jang6School of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaDepartment of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaThe effect of annealing ambient on SnO<sub>2</sub> thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO<sub>2</sub> films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO<sub>2</sub> TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm<sup>2</sup>/Vs, 0.87 V/decade, and 10<sup>7</sup>, respectively.https://www.mdpi.com/2079-9292/8/9/955Sol-gelSnO<sub>2</sub>thin film transistorannealing ambient
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Hyunjae Lee Seunghyun Ha Jin-Hyuk Bae In-Man Kang Kwangeun Kim Won-Yong Lee Jaewon Jang
spellingShingle	Hyunjae Lee Seunghyun Ha Jin-Hyuk Bae In-Man Kang Kwangeun Kim Won-Yong Lee Jaewon Jang Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route Electronics Sol-gel SnO<sub>2</sub> thin film transistor annealing ambient
author_facet	Hyunjae Lee Seunghyun Ha Jin-Hyuk Bae In-Man Kang Kwangeun Kim Won-Yong Lee Jaewon Jang
author_sort	Hyunjae Lee
title	Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
title_short	Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
title_full	Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
title_fullStr	Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
title_full_unstemmed	Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
title_sort	effect of annealing ambient on sno<sub>2</sub> thin film transistors fabricated via an ethanol-based sol-gel route
publisher	MDPI AG
series	Electronics
issn	2079-9292
publishDate	2019-08-01
description	The effect of annealing ambient on SnO<sub>2</sub> thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO<sub>2</sub> films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO<sub>2</sub> TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm<sup>2</sup>/Vs, 0.87 V/decade, and 10<sup>7</sup>, respectively.
topic	Sol-gel SnO<sub>2</sub> thin film transistor annealing ambient
url	https://www.mdpi.com/2079-9292/8/9/955
work_keys_str_mv	AT hyunjaelee effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT seunghyunha effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT jinhyukbae effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT inmankang effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT kwangeunkim effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT wonyonglee effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute AT jaewonjang effectofannealingambientonsnosub2subthinfilmtransistorsfabricatedviaanethanolbasedsolgelroute
_version_	1725971613485105152

Effect of Annealing Ambient on SnO<sub>2</sub> Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

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