Effect of Nb and alloying elements on interface reaction between high Nb-containing TiAl alloys and ZrO2-based ceramic moulds

In the present study, Ti-45Al-(6, 7, 8)Nb (at%) and Ti-45Al-8Nb-0.5(Mn, Si, Y, B) alloys were prepared by arc melting and casting into ZrO2 (Y2O3 stabilized) ceramic moulds to study the effect of alloying elements Nb and Mn, Si, Y, B on the interfacial reaction between casting TiAl alloys and cerami...

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Bibliographic Details
Main Authors: Liang Yang, Wen-bin Kan, You-wei Zhang
Format: Article
Language:English
Published: Foundry Journal Agency 2015-09-01
Series:China Foundry
Subjects:
Online Access:http://ff.foundryworld.com/uploadfile/2015110258217733.pdf
Description
Summary:In the present study, Ti-45Al-(6, 7, 8)Nb (at%) and Ti-45Al-8Nb-0.5(Mn, Si, Y, B) alloys were prepared by arc melting and casting into ZrO2 (Y2O3 stabilized) ceramic moulds to study the effect of alloying elements Nb and Mn, Si, Y, B on the interfacial reaction between casting TiAl alloys and ceramic moulds by SEM, and the elements' distribution in the interface reaction layer by line scanning. The results showed that with an increase in Nb content, the interfacial reaction weakened and the thickness of the reaction layer decreased gradually. The interface reaction thickness of the alloys with Nb content of 6, 7, 8at% were 60, 34 and 26 μm, respectively. Clearly, the addition of 8at% Nb to Ti-45Al is the best for the thickness of the reaction layer. The addition of Nb would form a Nb-rich film in the reaction layer, which could reduce the solubility of oxygen in the interface, and suppress further diffusion of oxygen to the matrix. If the same content of Mn, Si, Y, or B alloying elements were added respectively to Ti-45Al-8Nb, the thickness of the interface reaction layer from large to small was as follows: Mn>Si>Y>B. The interface reaction thickness increased after 0.5at% Mn added, had no obvious change after 0.5at% Si addition, and decreased after adding 0.5at% Y or B. The introduced elements, which formed a protective film or/and promoted the formation of a dense aluminum oxide layer, would be of benefit to the resistance of interfacial reaction.
ISSN:1672-6421
1672-6421