A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrat...
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Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR
2012-03-01
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doaj-f16526d005bd419ba05e6d2b94278fc72020-11-25T02:02:17ZengIranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECRIranian Journal of Chemistry & Chemical Engineering 1021-99861021-99862012-03-0131137426072A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different SubstratesNegin Manavizadeh0Ali Reza Khodayari1Ebrahim Asl Soleimani2Sheyda Bagherzadeh3Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran, I.R. IRANFaculty of Mechanical Engineering, K.N. Toosi University of Technology, Tehran, I.R. IRANThin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANThin Film Laboratory, ECE Department, University of Tehran, Tehran, I.R. IRANThe improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural and morphological properties of the ITO films were analyzed by four point probe, UV/VIS/IR spectrophotometer, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM). The quality of films deposited on buffer layer is found to be superior to those grown directly on a substrate. The structural, optical and electrical studies reveal that ZnO buffer layers improve the crystalline quality, optical and electrical properties of ITO thin films.http://www.ijcce.ac.ir/article_6072_f4e7750fbe1a5f07a0a80b2fa9f40ade.pdfrf sputteringindium tin oxidezinc oxidetransparent conductive oxide filmsbuffer layer |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Negin Manavizadeh Ali Reza Khodayari Ebrahim Asl Soleimani Sheyda Bagherzadeh |
spellingShingle |
Negin Manavizadeh Ali Reza Khodayari Ebrahim Asl Soleimani Sheyda Bagherzadeh A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates Iranian Journal of Chemistry & Chemical Engineering rf sputtering indium tin oxide zinc oxide transparent conductive oxide films buffer layer |
author_facet |
Negin Manavizadeh Ali Reza Khodayari Ebrahim Asl Soleimani Sheyda Bagherzadeh |
author_sort |
Negin Manavizadeh |
title |
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates |
title_short |
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates |
title_full |
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates |
title_fullStr |
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates |
title_full_unstemmed |
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates |
title_sort |
study of zno buffer layer effect on physical properties of ito thin films deposited on different substrates |
publisher |
Iranian Institute of Research and Development in Chemical Industries (IRDCI)-ACECR |
series |
Iranian Journal of Chemistry & Chemical Engineering |
issn |
1021-9986 1021-9986 |
publishDate |
2012-03-01 |
description |
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural and morphological properties of the ITO films were analyzed by four point probe, UV/VIS/IR spectrophotometer, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM). The quality of films deposited on buffer layer is found to be superior to those grown directly on a substrate. The structural, optical and electrical studies reveal that ZnO buffer layers improve the crystalline quality, optical and electrical properties of ITO thin films. |
topic |
rf sputtering indium tin oxide zinc oxide transparent conductive oxide films buffer layer |
url |
http://www.ijcce.ac.ir/article_6072_f4e7750fbe1a5f07a0a80b2fa9f40ade.pdf |
work_keys_str_mv |
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