ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>

Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up...

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Main Authors: A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J. -L. Lazzari
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/338
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spelling doaj-f1a54e39f98a41278368c304b8883e452021-07-28T16:19:49ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01053437337ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>A. V. Krivosheeva0V. L. Shaposhnikov1V. E. Borisenko2J. -L. Lazzari3Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsCentre Interdisciplinaire de Nanoscience de Marseille (CINaM)Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.https://doklady.bsuir.by/jour/article/view/338molybdenum disulfidenanostructureelectronic propertiesphonons
collection DOAJ
language Russian
format Article
sources DOAJ
author A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
J. -L. Lazzari
spellingShingle A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
J. -L. Lazzari
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
molybdenum disulfide
nanostructure
electronic properties
phonons
author_facet A. V. Krivosheeva
V. L. Shaposhnikov
V. E. Borisenko
J. -L. Lazzari
author_sort A. V. Krivosheeva
title ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
title_short ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
title_full ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
title_fullStr ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
title_full_unstemmed ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
title_sort electronic and dynamical properties of bulk and layered mos<sub>2</sub>
publisher Educational institution «Belarusian State University of Informatics and Radioelectronics»
series Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
issn 1729-7648
publishDate 2019-06-01
description Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.
topic molybdenum disulfide
nanostructure
electronic properties
phonons
url https://doklady.bsuir.by/jour/article/view/338
work_keys_str_mv AT avkrivosheeva electronicanddynamicalpropertiesofbulkandlayeredmossub2sub
AT vlshaposhnikov electronicanddynamicalpropertiesofbulkandlayeredmossub2sub
AT veborisenko electronicanddynamicalpropertiesofbulkandlayeredmossub2sub
AT jllazzari electronicanddynamicalpropertiesofbulkandlayeredmossub2sub
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