ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>
Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
|
Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/338 |
id |
doaj-f1a54e39f98a41278368c304b8883e45 |
---|---|
record_format |
Article |
spelling |
doaj-f1a54e39f98a41278368c304b8883e452021-07-28T16:19:49ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-01053437337ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub>A. V. Krivosheeva0V. L. Shaposhnikov1V. E. Borisenko2J. -L. Lazzari3Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsCentre Interdisciplinaire de Nanoscience de Marseille (CINaM)Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.https://doklady.bsuir.by/jour/article/view/338molybdenum disulfidenanostructureelectronic propertiesphonons |
collection |
DOAJ |
language |
Russian |
format |
Article |
sources |
DOAJ |
author |
A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko J. -L. Lazzari |
spellingShingle |
A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko J. -L. Lazzari ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki molybdenum disulfide nanostructure electronic properties phonons |
author_facet |
A. V. Krivosheeva V. L. Shaposhnikov V. E. Borisenko J. -L. Lazzari |
author_sort |
A. V. Krivosheeva |
title |
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> |
title_short |
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> |
title_full |
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> |
title_fullStr |
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> |
title_full_unstemmed |
ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS<sub>2</sub> |
title_sort |
electronic and dynamical properties of bulk and layered mos<sub>2</sub> |
publisher |
Educational institution «Belarusian State University of Informatics and Radioelectronics» |
series |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
issn |
1729-7648 |
publishDate |
2019-06-01 |
description |
Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented. |
topic |
molybdenum disulfide nanostructure electronic properties phonons |
url |
https://doklady.bsuir.by/jour/article/view/338 |
work_keys_str_mv |
AT avkrivosheeva electronicanddynamicalpropertiesofbulkandlayeredmossub2sub AT vlshaposhnikov electronicanddynamicalpropertiesofbulkandlayeredmossub2sub AT veborisenko electronicanddynamicalpropertiesofbulkandlayeredmossub2sub AT jllazzari electronicanddynamicalpropertiesofbulkandlayeredmossub2sub |
_version_ |
1721267905703706624 |