Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix

Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiatio...

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Main Authors: Andronova E. V., Baganov Ye. A., Kurak V. V.
Format: Article
Language:English
Published: Politehperiodika 2011-11-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:http://www.tkea.com.ua/tkea/2011/5_2011/pdf/09.zip
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spelling doaj-f1bf5dee617a414abdbd8b3014bac87e2020-11-24T20:57:09ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182011-11-0153538Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrixAndronova E. V.Baganov Ye. A.Kurak V. V.Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.http://www.tkea.com.ua/tkea/2011/5_2011/pdf/09.ziplow-dimensional structuresindium antimonidegallium antimonideliquid phase epitaxyphotoluminescence spectrumradiative transition
collection DOAJ
language English
format Article
sources DOAJ
author Andronova E. V.
Baganov Ye. A.
Kurak V. V.
spellingShingle Andronova E. V.
Baganov Ye. A.
Kurak V. V.
Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
low-dimensional structures
indium antimonide
gallium antimonide
liquid phase epitaxy
photoluminescence spectrum
radiative transition
author_facet Andronova E. V.
Baganov Ye. A.
Kurak V. V.
author_sort Andronova E. V.
title Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
title_short Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
title_full Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
title_fullStr Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
title_full_unstemmed Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix
title_sort investigation of photoluminescence spectrums of insb low-dimensional structures formed in gasb matrix
publisher Politehperiodika
series Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
issn 2225-5818
publishDate 2011-11-01
description Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.
topic low-dimensional structures
indium antimonide
gallium antimonide
liquid phase epitaxy
photoluminescence spectrum
radiative transition
url http://www.tkea.com.ua/tkea/2011/5_2011/pdf/09.zip
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