NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics....
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doaj-f1c819ce91d8460cafb0e940960e8cb32020-11-24T21:15:23ZengMDPI AGMaterials1996-19442017-12-011113710.3390/ma11010037ma11010037NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure CharacteristicsAbu ul Hassan Sarwar Rana0Hyun-Seok Kim1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, KoreaPrevious studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes.https://www.mdpi.com/1996-1944/11/1/37ZnOnanorodGadopingheterostructureoptoelectronicshydrothermal |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Abu ul Hassan Sarwar Rana Hyun-Seok Kim |
spellingShingle |
Abu ul Hassan Sarwar Rana Hyun-Seok Kim NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics Materials ZnO nanorod Ga doping heterostructure optoelectronics hydrothermal |
author_facet |
Abu ul Hassan Sarwar Rana Hyun-Seok Kim |
author_sort |
Abu ul Hassan Sarwar Rana |
title |
NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics |
title_short |
NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics |
title_full |
NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics |
title_fullStr |
NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics |
title_full_unstemmed |
NH4OH Treatment for an Optimum Morphological Trade-off to Hydrothermal Ga-Doped n-ZnO/p-Si Heterostructure Characteristics |
title_sort |
nh4oh treatment for an optimum morphological trade-off to hydrothermal ga-doped n-zno/p-si heterostructure characteristics |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2017-12-01 |
description |
Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH4OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostructure characteristics. The GZRs were grown via one of the most eminent and facile hydrothermal method with an increase in Ga concentration from 1% to 5%. The supplementary OH− ion concentration was effectively controlled by the addition of an optimum amount of NH4OH to synchronize GZR aspect and surface-to-volume ratio. Hence, the probed results show only the effects of Ga-doping, rather than the changed morphology, on the optoelectronic characteristics of n-GZR/p-Si heterostructures. The doped nanostructures were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, photoluminescence, Hall-effect measurement, and Keithley 2410 measurement systems. GZRs had identical morphology and dimensions with a typical wurtzite phase. As the GZR carrier concentration increased, the PL response showed a blue shift because of Burstein-Moss effect. Also, the heterostructure current levels increased linearly with doping concentration. We believe that the presented GZRs with optimized morphology have great potential for field-effect transistors, light-emitting diodes, ultraviolet sensors, and laser diodes. |
topic |
ZnO nanorod Ga doping heterostructure optoelectronics hydrothermal |
url |
https://www.mdpi.com/1996-1944/11/1/37 |
work_keys_str_mv |
AT abuulhassansarwarrana nh4ohtreatmentforanoptimummorphologicaltradeofftohydrothermalgadopednznopsiheterostructurecharacteristics AT hyunseokkim nh4ohtreatmentforanoptimummorphologicaltradeofftohydrothermalgadopednznopsiheterostructurecharacteristics |
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1716745469170810880 |