Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories

Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories

In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable res...

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Bibliographic Details
Main Authors:	Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Crystals
Subjects:	resistive random access memory (RRAM) bipolar resistive switching behavior thin films electrical conduction mechanism
Online Access:	https://www.mdpi.com/2073-4352/9/6/318

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