Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor

Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor

Sol-gel-processed Mg-doped SnO<sub>2</sub> thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal...

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Main Authors: Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Electronics
Subjects:
sol-gel process
thin-film transistor
sno<sub>2</sub>
mg doping
negative bias stability
Online Access:https://www.mdpi.com/2079-9292/9/3/523
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spelling doaj-f4cffef2592b476ea857ed1ba74aeb6a2020-11-25T02:01:49ZengMDPI AGElectronics2079-92922020-03-019352310.3390/electronics9030523electronics9030523Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film TransistorWon-Yong Lee0Hyunjae Lee1Seunghyun Ha2Changmin Lee3Jin-Hyuk Bae4In-Man Kang5Kwangeun Kim6Jaewon Jang7School of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaDepartment of Electronic and Electrical Convergence Engineering, Hongik University, Sejong 30016, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSol-gel-processed Mg-doped SnO<sub>2</sub> thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO<sub>2</sub> TFT was characterized by a field effect mobility, a subthreshold swing, and I<sub>on</sub>/I<sub>off</sub> ratio of 4.23 cm<sup>2</sup>/Vs, 1.37 V/decade, and ~1 &#215; 10<sup>7</sup>, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO<sub>2</sub>-based thin-film devices.https://www.mdpi.com/2079-9292/9/3/523sol-gel processthin-film transistorsno<sub>2</sub>mg dopingnegative bias stability
collection DOAJ
language English
format Article
sources DOAJ
author Won-Yong Lee
Hyunjae Lee
Seunghyun Ha
Changmin Lee
Jin-Hyuk Bae
In-Man Kang
Kwangeun Kim
Jaewon Jang
spellingShingle Won-Yong Lee
Hyunjae Lee
Seunghyun Ha
Changmin Lee
Jin-Hyuk Bae
In-Man Kang
Kwangeun Kim
Jaewon Jang
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
Electronics
sol-gel process
thin-film transistor
sno<sub>2</sub>
mg doping
negative bias stability
author_facet Won-Yong Lee
Hyunjae Lee
Seunghyun Ha
Changmin Lee
Jin-Hyuk Bae
In-Man Kang
Kwangeun Kim
Jaewon Jang
author_sort Won-Yong Lee
title Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
title_short Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
title_full Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
title_fullStr Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
title_full_unstemmed Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO<sub>2</sub> Thin-Film Transistor
title_sort effect of mg doping on the electrical performance of a sol-gel-processed sno<sub>2</sub> thin-film transistor
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2020-03-01
description Sol-gel-processed Mg-doped SnO<sub>2</sub> thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO<sub>2</sub> TFT was characterized by a field effect mobility, a subthreshold swing, and I<sub>on</sub>/I<sub>off</sub> ratio of 4.23 cm<sup>2</sup>/Vs, 1.37 V/decade, and ~1 &#215; 10<sup>7</sup>, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO<sub>2</sub>-based thin-film devices.
topic sol-gel process
thin-film transistor
sno<sub>2</sub>
mg doping
negative bias stability
url https://www.mdpi.com/2079-9292/9/3/523
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