Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions

The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention...

Full description

Bibliographic Details
Main Author: Fei Zhao
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Materials
Subjects:
tsvs
sputtering
electroplating
interface effect
Online Access:https://www.mdpi.com/1996-1944/12/22/3713
id doaj-f633ed17229640d5b870fa2790bb9238
record_format Article
spelling doaj-f633ed17229640d5b870fa2790bb92382020-11-25T01:35:03ZengMDPI AGMaterials1996-19442019-11-011222371310.3390/ma12223713ma12223713Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating ConditionsFei Zhao0The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050081, ChinaThe high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure.https://www.mdpi.com/1996-1944/12/22/3713tsvssputteringelectroplatinginterface effect
collection DOAJ
language English
format Article
sources DOAJ
author Fei Zhao
spellingShingle Fei Zhao
Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
Materials
tsvs
sputtering
electroplating
interface effect
author_facet Fei Zhao
author_sort Fei Zhao
title Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
title_short Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
title_full Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
title_fullStr Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
title_full_unstemmed Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
title_sort improvement on fully filled through silicon vias by optimized sputtering and electroplating conditions
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2019-11-01
description The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure.
topic tsvs
sputtering
electroplating
interface effect
url https://www.mdpi.com/1996-1944/12/22/3713
work_keys_str_mv AT feizhao improvementonfullyfilledthroughsiliconviasbyoptimizedsputteringandelectroplatingconditions
_version_ 1725068883552894976

Similar Items