Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention

Toward Reliable Multi-Level Operation in RRAM Arrays: Improving Post-Algorithm Stability and Assessing Endurance/Data Retention

Achieving a reliable multi-level operation in resistive random access memory (RRAM) arrays is currently a challenging task due to several threats like the post-algorithm instability occurring after the levels placement, the limited endurance, and the poor data retention capabilities at high temperat...

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Bibliographic Details
Main Authors: Eduardo Perez, Cristian Zambelli, Mamathamba Kalishettyhalli Mahadevaiah, Piero Olivo, Christian Wenger
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
RRAM
arrays
algorithm instabilities
multi-level
data retention
accelerated test
Online Access:https://ieeexplore.ieee.org/document/8781843/

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