Development of a virtual metrology method using plasma harmonics analysis

A virtual metrology technique based on plasma harmonics is developed for predicting semiconductor processes. From a plasma process performed by 300 mm photoresist stripper equipment, a strong correlation is found between optical plasma harmonics intensities and the process results, such as the photo...

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Main Authors: H. Jun, J. Shin, S. Kim, H. Choi
Format: Article
Language:English
Published: AIP Publishing LLC 2017-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4993282
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spelling doaj-f7300df16fe745f2a66c7c1a9343cd132020-11-24T21:22:30ZengAIP Publishing LLCAIP Advances2158-32262017-07-0177075205075205-810.1063/1.4993282018707ADVDevelopment of a virtual metrology method using plasma harmonics analysisH. Jun0J. Shin1S. Kim2H. Choi3Semiconductor Equipment Technology Team, Advanced Technology Lab., LG Electronics, 222 LG-ro Jinwi-myeon, Pyeongtaek-si, Gyeonggi-do 17709, Republic of KoreaSemiconductor Equipment Technology Team, Advanced Technology Lab., LG Electronics, 222 LG-ro Jinwi-myeon, Pyeongtaek-si, Gyeonggi-do 17709, Republic of KoreaSemiconductor Equipment Technology Team, Advanced Technology Lab., LG Electronics, 222 LG-ro Jinwi-myeon, Pyeongtaek-si, Gyeonggi-do 17709, Republic of KoreaSemiconductor Equipment Technology Team, Advanced Technology Lab., LG Electronics, 222 LG-ro Jinwi-myeon, Pyeongtaek-si, Gyeonggi-do 17709, Republic of KoreaA virtual metrology technique based on plasma harmonics is developed for predicting semiconductor processes. From a plasma process performed by 300 mm photoresist stripper equipment, a strong correlation is found between optical plasma harmonics intensities and the process results, such as the photoresist strip rate and strip non-uniformity. Based on this finding, a general process prediction model is developed. The developed virtual metrology model shows that the R-squared (R2) values between the measured and predicted process results are 95% and 64% for the photoresist strip rate and photoresist strip non-uniformity, respectively. This is the first research on process prediction based on optical plasma harmonics analysis, and the results can be applied to semiconductor processes such as dry etching and plasma enhanced chemical vapor deposition.http://dx.doi.org/10.1063/1.4993282
collection DOAJ
language English
format Article
sources DOAJ
author H. Jun
J. Shin
S. Kim
H. Choi
spellingShingle H. Jun
J. Shin
S. Kim
H. Choi
Development of a virtual metrology method using plasma harmonics analysis
AIP Advances
author_facet H. Jun
J. Shin
S. Kim
H. Choi
author_sort H. Jun
title Development of a virtual metrology method using plasma harmonics analysis
title_short Development of a virtual metrology method using plasma harmonics analysis
title_full Development of a virtual metrology method using plasma harmonics analysis
title_fullStr Development of a virtual metrology method using plasma harmonics analysis
title_full_unstemmed Development of a virtual metrology method using plasma harmonics analysis
title_sort development of a virtual metrology method using plasma harmonics analysis
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-07-01
description A virtual metrology technique based on plasma harmonics is developed for predicting semiconductor processes. From a plasma process performed by 300 mm photoresist stripper equipment, a strong correlation is found between optical plasma harmonics intensities and the process results, such as the photoresist strip rate and strip non-uniformity. Based on this finding, a general process prediction model is developed. The developed virtual metrology model shows that the R-squared (R2) values between the measured and predicted process results are 95% and 64% for the photoresist strip rate and photoresist strip non-uniformity, respectively. This is the first research on process prediction based on optical plasma harmonics analysis, and the results can be applied to semiconductor processes such as dry etching and plasma enhanced chemical vapor deposition.
url http://dx.doi.org/10.1063/1.4993282
work_keys_str_mv AT hjun developmentofavirtualmetrologymethodusingplasmaharmonicsanalysis
AT jshin developmentofavirtualmetrologymethodusingplasmaharmonicsanalysis
AT skim developmentofavirtualmetrologymethodusingplasmaharmonicsanalysis
AT hchoi developmentofavirtualmetrologymethodusingplasmaharmonicsanalysis
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