Selective Growth of α-Sexithiophene by Using Silicon Oxides Patterns

• Main Authors: Cristiano Albonetti, Marianna Barbalinardo, Silvia Milita, Massimiliano Cavallini, Fabiola Liscio, Jean-François Moulin, Fabio Biscarini
• Format: Article
• Language: English
• Published: MDPI AG 2011-09-01
• Series: International Journal of Molecular Sciences
• Subjects: sexithiophene; atomic force microscopy; pattern; template; annealing
• Online Access: http://www.mdpi.com/1422-0067/12/9/5719/

A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiOx substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiOx substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm2. Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.