Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor

Herein, a carbon nanotubes-based sensor has been grown for the purpose of ethylene detection. The prepared CNTs had a crystalline structure with a smooth surface of 11.0 nm in diameter and 10.0 µm in length. The low-intensity graphite peak (G-band) as compared to the peak of the defect (D-band) char...

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Main Authors:	Nagih M. Shaalan, Osama Saber, Faheem Ahmed, Abdullah Aljaafari, Shalendra Kumar
Format:	Article
Language:	English
Published:	MDPI AG 2021-06-01
Series:	Chemosensors
Subjects:	defects electrical properties nanostructure plasma-enhanced CVD (PECVD) (deposition) sensor surface reaction
Online Access:	https://www.mdpi.com/2227-9040/9/6/131

id	doaj-f942f8555bcb4eb7b061fd49aaad6c6b
record_format	Article
spelling	doaj-f942f8555bcb4eb7b061fd49aaad6c6b2021-06-30T23:29:26ZengMDPI AGChemosensors2227-90402021-06-01913113110.3390/chemosensors9060131Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring SensorNagih M. Shaalan0Osama Saber1Faheem Ahmed2Abdullah Aljaafari3Shalendra Kumar4Department of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi ArabiaDepartment of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi ArabiaDepartment of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi ArabiaDepartment of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi ArabiaDepartment of Physics, College of Science, King Faisal University, P.O. Box 400, Al-Ahsa 31982, Saudi ArabiaHerein, a carbon nanotubes-based sensor has been grown for the purpose of ethylene detection. The prepared CNTs had a crystalline structure with a smooth surface of 11.0 nm in diameter and 10.0 µm in length. The low-intensity graphite peak (G-band) as compared to the peak of the defect (D-band) characterizes the defects in the CNTs. An MWNTs-gas sensor was fabricated for monitoring the ethylene gas. The highest response was recorded at a low operating temperature of 30 °C. The sensor was also examined at 300 ppb up to 10 ppm and it showed a response of 2% up to 28%. The sensor response and recovery time constants were varied from 60 to 300 s, depending on the gas concentration. The results that were obtained for the synthetic ethylene gas were also compared with the real measurements for banana ripening. The results confirmed that the sensor is appropriate for the monitoring of fruit ripening.https://www.mdpi.com/2227-9040/9/6/131defectselectrical propertiesnanostructureplasma-enhanced CVD (PECVD) (deposition)sensorsurface reaction
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Nagih M. Shaalan Osama Saber Faheem Ahmed Abdullah Aljaafari Shalendra Kumar
spellingShingle	Nagih M. Shaalan Osama Saber Faheem Ahmed Abdullah Aljaafari Shalendra Kumar Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor Chemosensors defects electrical properties nanostructure plasma-enhanced CVD (PECVD) (deposition) sensor surface reaction
author_facet	Nagih M. Shaalan Osama Saber Faheem Ahmed Abdullah Aljaafari Shalendra Kumar
author_sort	Nagih M. Shaalan
title	Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor
title_short	Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor
title_full	Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor
title_fullStr	Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor
title_full_unstemmed	Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor
title_sort	growth of defect-induced carbon nanotubes for low-temperature fruit monitoring sensor
publisher	MDPI AG
series	Chemosensors
issn	2227-9040
publishDate	2021-06-01
description	Herein, a carbon nanotubes-based sensor has been grown for the purpose of ethylene detection. The prepared CNTs had a crystalline structure with a smooth surface of 11.0 nm in diameter and 10.0 µm in length. The low-intensity graphite peak (G-band) as compared to the peak of the defect (D-band) characterizes the defects in the CNTs. An MWNTs-gas sensor was fabricated for monitoring the ethylene gas. The highest response was recorded at a low operating temperature of 30 °C. The sensor was also examined at 300 ppb up to 10 ppm and it showed a response of 2% up to 28%. The sensor response and recovery time constants were varied from 60 to 300 s, depending on the gas concentration. The results that were obtained for the synthetic ethylene gas were also compared with the real measurements for banana ripening. The results confirmed that the sensor is appropriate for the monitoring of fruit ripening.
topic	defects electrical properties nanostructure plasma-enhanced CVD (PECVD) (deposition) sensor surface reaction
url	https://www.mdpi.com/2227-9040/9/6/131
work_keys_str_mv	AT nagihmshaalan growthofdefectinducedcarbonnanotubesforlowtemperaturefruitmonitoringsensor AT osamasaber growthofdefectinducedcarbonnanotubesforlowtemperaturefruitmonitoringsensor AT faheemahmed growthofdefectinducedcarbonnanotubesforlowtemperaturefruitmonitoringsensor AT abdullahaljaafari growthofdefectinducedcarbonnanotubesforlowtemperaturefruitmonitoringsensor AT shalendrakumar growthofdefectinducedcarbonnanotubesforlowtemperaturefruitmonitoringsensor
_version_	1721351286507438080

Growth of Defect-Induced Carbon Nanotubes for Low-Temperature Fruit Monitoring Sensor

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