High-Sensitivity Microwave Sensor Based on an Interdigital-Capacitor-Shaped Defected Ground Structure for Permittivity Characterization

• Main Authors: Junho Yeo, Jong-Ig Lee
• Format: Article
• Language: English
• Published: MDPI AG 2019-01-01
• Series: Sensors
• Subjects: high-sensitivity; microwave sensor; interdigital-capacitor-shaped; defected ground structure; permittivity characterization
• Online Access: https://www.mdpi.com/1424-8220/19/3/498

This study proposes a high-sensitivity microwave sensor based on an interdigital-capacitor-shaped defected ground structure (IDCS-DGS) in a microstrip transmission line for the dielectric characterization of planar materials. The proposed IDCS-DGS was designed by modifying the straight ridge structure of an H-shaped aperture. The proposed sensor was compared with conventional sensors based on a double-ring complementary split ring resonator (CSRR), a single-ring CSRR, and a rotated single-ring CSRR. All the sensors were designed and fabricated on 0.76-mm-thick RF-35 substrate and operated at 1.5 GHz under unloaded conditions. Five different standard dielectric samples with dielectric constants ranging from 2.17 to 10.2 were tested for the sensitivity comparison. The sensitivity of the proposed sensor was measured by the shift in the resonant frequency of the transmission coefficient, and compared with conventional sensors. The experiment results show that the sensitivity of the proposed sensor was two times higher for a low permittivity of 2.17 and it was 1.42 times higher for a high permittivity of 10.2 when compared with the double-ring CSRR-based sensor.