Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying

This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the sur...

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Main Authors: Chih-Hung Hsu, Lung-Chien Chen, Jia-Ren Wu
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2014/128235
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spelling doaj-fc01c5bac7bd4392922b39892d19d6092020-11-24T22:56:21ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/128235128235Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic SprayingChih-Hung Hsu0Lung-Chien Chen1Jia-Ren Wu2Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanThis work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions.http://dx.doi.org/10.1155/2014/128235
collection DOAJ
language English
format Article
sources DOAJ
author Chih-Hung Hsu
Lung-Chien Chen
Jia-Ren Wu
spellingShingle Chih-Hung Hsu
Lung-Chien Chen
Jia-Ren Wu
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
International Journal of Photoenergy
author_facet Chih-Hung Hsu
Lung-Chien Chen
Jia-Ren Wu
author_sort Chih-Hung Hsu
title Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
title_short Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
title_full Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
title_fullStr Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
title_full_unstemmed Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
title_sort prepared and characteristics of zno:yag/silicon nanostructure diodes prepared by ultrasonic spraying
publisher Hindawi Limited
series International Journal of Photoenergy
issn 1110-662X
1687-529X
publishDate 2014-01-01
description This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions.
url http://dx.doi.org/10.1155/2014/128235
work_keys_str_mv AT chihhunghsu preparedandcharacteristicsofznoyagsiliconnanostructurediodespreparedbyultrasonicspraying
AT lungchienchen preparedandcharacteristicsofznoyagsiliconnanostructurediodespreparedbyultrasonicspraying
AT jiarenwu preparedandcharacteristicsofznoyagsiliconnanostructurediodespreparedbyultrasonicspraying
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