Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying
This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the sur...
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2014/128235 |
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doaj-fc01c5bac7bd4392922b39892d19d6092020-11-24T22:56:21ZengHindawi LimitedInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/128235128235Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic SprayingChih-Hung Hsu0Lung-Chien Chen1Jia-Ren Wu2Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanDepartment of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, TaiwanThis work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions.http://dx.doi.org/10.1155/2014/128235 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chih-Hung Hsu Lung-Chien Chen Jia-Ren Wu |
spellingShingle |
Chih-Hung Hsu Lung-Chien Chen Jia-Ren Wu Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying International Journal of Photoenergy |
author_facet |
Chih-Hung Hsu Lung-Chien Chen Jia-Ren Wu |
author_sort |
Chih-Hung Hsu |
title |
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying |
title_short |
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying |
title_full |
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying |
title_fullStr |
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying |
title_full_unstemmed |
Prepared and Characteristics of ZnO:YAG/Silicon Nanostructure Diodes Prepared by Ultrasonic Spraying |
title_sort |
prepared and characteristics of zno:yag/silicon nanostructure diodes prepared by ultrasonic spraying |
publisher |
Hindawi Limited |
series |
International Journal of Photoenergy |
issn |
1110-662X 1687-529X |
publishDate |
2014-01-01 |
description |
This work presents a novel white light source. An yttrium aluminum garnet (YAG) phosphor incorporated zinc oxide (ZnO) (ZnO:YAG) film is deposited on a silicon substrate by ultrasonic spray pyrolysis to form a nanostructure diode. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the silicon substrate. A white broad band at the room temperature photoluminescence ranging from 420 to 650 nm for the ZnO:YAG/silicon nanostructure diode was observed. The white broad band consists of the emissions of defect level transition of the ZnO film and the 5D4 level to the 7F6 and 7F5 level transitions of Ce3+ ions. |
url |
http://dx.doi.org/10.1155/2014/128235 |
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