Fabrication and Characteristics of Heavily Fe-Doped LiNbO3/Si Heterojunction

A series of heavily Fe-doped LiNbO3 (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO3 crystal reached 3.30 × 10−8 Ω&#...

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Main Authors:	Wencan Li, Jiao Cui, Dahuai Zheng, Weiwei Wang, Shuolin Wang, Shaoqing Song, Hongde Liu, Yongfa Kong, Jingjun Xu
Format:	Article
Language:	English
Published:	MDPI AG 2019-08-01
Series:	Materials
Subjects:	heavily Fe-doped conductivity pulsed laser deposition heterojunction
Online Access:	https://www.mdpi.com/1996-1944/12/17/2659

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spelling	doaj-fc22486a31a44672b4c4578f1f1a175a2020-11-25T01:56:33ZengMDPI AGMaterials1996-19442019-08-011217265910.3390/ma12172659ma12172659Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si HeterojunctionWencan Li0Jiao Cui1Dahuai Zheng2Weiwei Wang3Shuolin Wang4Shaoqing Song5Hongde Liu6Yongfa Kong7Jingjun Xu8The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, ChinaThe MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, ChinaThe MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, ChinaSchool of Physics, Nankai University, Tianjin 300071, ChinaSchool of Physics, Nankai University, Tianjin 300071, ChinaSchool of Physics, Nankai University, Tianjin 300071, ChinaSchool of Physics, Nankai University, Tianjin 300071, ChinaThe MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, ChinaThe MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, ChinaA series of heavily Fe-doped LiNbO<sub>3</sub> (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO<sub>3</sub> crystal reached 3.30 × 10<sup>−8</sup> Ω<sup>−1</sup> cm<sup>−1</sup> and 1.46 × 10<sup>−7</sup> Ω<sup>−1</sup> cm<sup>−1</sup> at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO<sub>3</sub>, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO<sub>3</sub> on a p-type Si substrate using the pulsed laser deposition. The current−voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.https://www.mdpi.com/1996-1944/12/17/2659heavily Fe-dopedconductivitypulsed laser depositionheterojunction
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Wencan Li Jiao Cui Dahuai Zheng Weiwei Wang Shuolin Wang Shaoqing Song Hongde Liu Yongfa Kong Jingjun Xu
spellingShingle	Wencan Li Jiao Cui Dahuai Zheng Weiwei Wang Shuolin Wang Shaoqing Song Hongde Liu Yongfa Kong Jingjun Xu Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction Materials heavily Fe-doped conductivity pulsed laser deposition heterojunction
author_facet	Wencan Li Jiao Cui Dahuai Zheng Weiwei Wang Shuolin Wang Shaoqing Song Hongde Liu Yongfa Kong Jingjun Xu
author_sort	Wencan Li
title	Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction
title_short	Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction
title_full	Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction
title_fullStr	Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction
title_full_unstemmed	Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction
title_sort	fabrication and characteristics of heavily fe-doped linbo<sub>3</sub>/si heterojunction
publisher	MDPI AG
series	Materials
issn	1996-1944
publishDate	2019-08-01
description	A series of heavily Fe-doped LiNbO<sub>3</sub> (LN:Fe) crystals were grown via the Czochralski method. The dark- and photo-conductivity of the 5.0 wt.% Fe-doped LiNbO<sub>3</sub> crystal reached 3.30 × 10<sup>−8</sup> Ω<sup>−1</sup> cm<sup>−1</sup> and 1.46 × 10<sup>−7</sup> Ω<sup>−1</sup> cm<sup>−1</sup> at 473 nm, which are about 7 and 5 orders of magnitude higher than that of congruent LiNbO<sub>3</sub>, respectively. Then, a p-n heterojunction was fabricated by depositing the heavily Fe-doped LiNbO<sub>3</sub> on a p-type Si substrate using the pulsed laser deposition. The current−voltage curve of the LN:Fe/Si heterojunction presents a well-defined behavior with a turn-on voltage of 2.9 V. This LN:Fe/Si heterojunction gives an excellent prototype device for integrated optics and electro-photonics.
topic	heavily Fe-doped conductivity pulsed laser deposition heterojunction
url	https://www.mdpi.com/1996-1944/12/17/2659
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Fabrication and Characteristics of Heavily Fe-Doped LiNbO<sub>3</sub>/Si Heterojunction

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