Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
Abstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a ce...
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doaj-fccd56d28a7a40f4abf13b8af1bbd2c22020-11-25T03:03:35ZengSpringerOpenNanoscale Research Letters1556-276X2020-08-011511910.1186/s11671-020-03384-zLow Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate StructureSiqing Zhang0Yan Liu1Jiuren Zhou2Meng Ma3Anyuan Gao4Binjie Zheng5Lingfei Li6Xin Su7Genquan Han8Jincheng Zhang9Yi Shi10Xiaomu Wang11Yue Hao12Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityAbstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.http://link.springer.com/article/10.1186/s11671-020-03384-zNonvolatile memoryFerroelectricMoS22DField-effect transistorHZO |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao |
spellingShingle |
Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure Nanoscale Research Letters Nonvolatile memory Ferroelectric MoS2 2D Field-effect transistor HZO |
author_facet |
Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao |
author_sort |
Siqing Zhang |
title |
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure |
title_short |
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure |
title_full |
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure |
title_fullStr |
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure |
title_full_unstemmed |
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure |
title_sort |
low voltage operating 2d mos2 ferroelectric memory transistor with hf1-xzrxo2 gate structure |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1556-276X |
publishDate |
2020-08-01 |
description |
Abstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications. |
topic |
Nonvolatile memory Ferroelectric MoS2 2D Field-effect transistor HZO |
url |
http://link.springer.com/article/10.1186/s11671-020-03384-z |
work_keys_str_mv |
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