Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Abstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a ce...

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Main Authors:	Siqing Zhang, Yan Liu, Jiuren Zhou, Meng Ma, Anyuan Gao, Binjie Zheng, Lingfei Li, Xin Su, Genquan Han, Jincheng Zhang, Yi Shi, Xiaomu Wang, Yue Hao
Format:	Article
Language:	English
Published:	SpringerOpen 2020-08-01
Series:	Nanoscale Research Letters
Subjects:	Nonvolatile memory Ferroelectric MoS2 2D Field-effect transistor HZO
Online Access:	http://link.springer.com/article/10.1186/s11671-020-03384-z

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record_format	Article
spelling	doaj-fccd56d28a7a40f4abf13b8af1bbd2c22020-11-25T03:03:35ZengSpringerOpenNanoscale Research Letters1556-276X2020-08-011511910.1186/s11671-020-03384-zLow Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate StructureSiqing Zhang0Yan Liu1Jiuren Zhou2Meng Ma3Anyuan Gao4Binjie Zheng5Lingfei Li6Xin Su7Genquan Han8Jincheng Zhang9Yi Shi10Xiaomu Wang11Yue Hao12Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversitySchool of Electronic Science and Engineering, Nanjing UniversitySchool of Electronic Science and Engineering, Nanjing UniversityWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian UniversityAbstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.http://link.springer.com/article/10.1186/s11671-020-03384-zNonvolatile memoryFerroelectricMoS22DField-effect transistorHZO
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao
spellingShingle	Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure Nanoscale Research Letters Nonvolatile memory Ferroelectric MoS2 2D Field-effect transistor HZO
author_facet	Siqing Zhang Yan Liu Jiuren Zhou Meng Ma Anyuan Gao Binjie Zheng Lingfei Li Xin Su Genquan Han Jincheng Zhang Yi Shi Xiaomu Wang Yue Hao
author_sort	Siqing Zhang
title	Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
title_short	Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
title_full	Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
title_fullStr	Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
title_full_unstemmed	Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
title_sort	low voltage operating 2d mos2 ferroelectric memory transistor with hf1-xzrxo2 gate structure
publisher	SpringerOpen
series	Nanoscale Research Letters
issn	1556-276X
publishDate	2020-08-01
description	Abstract Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
topic	Nonvolatile memory Ferroelectric MoS2 2D Field-effect transistor HZO
url	http://link.springer.com/article/10.1186/s11671-020-03384-z
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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

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