Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

<p>Abstract</p> <p>Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generate...

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Bibliographic Details
Main Authors: Heyn Ch, Stemmann A, K&#246;ppen T, Strelow Ch, Kipp T, Grave M, Mendach S, Hansen W
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum dots
Molecular beam epitaxy
Droplet etching
Photoluminescence
Atomic force microscopy
Online Access:http://dx.doi.org/10.1007/s11671-009-9507-3
Description
Summary:<p>Abstract</p> <p>Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs generates strain-free GaAs quantum dots with either broadband optical emission or sharp photoluminescence (PL) lines. Broadband emission is found for samples with completely filled flat holes, which have a very broad depth distribution. On the other hand, partly filling of deep holes yield highly uniform quantum dots with very sharp PL lines.</p>
ISSN:1931-7573
1556-276X

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