Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition
In the 2D material framework, molybdenum disulfide (MoS<sub>2</sub>) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS<sub>2</sub> remains a challenge for distinct practica...
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doaj-fd799c02896b43df92609c9cddc136d12020-11-25T03:37:28ZengMDPI AGMaterials1996-19442020-06-01132786278610.3390/ma13122786Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor DepositionPinakapani Tummala0Alessio Lamperti1Mario Alia2Erika Kozma3Luca Giampaolo Nobili4Alessandro Molle5IMM-CNR, Unit of Agrate Brianza, via C. Olivetti 2, I-20864 Agrate Brianza (MB), ItalyIMM-CNR, Unit of Agrate Brianza, via C. Olivetti 2, I-20864 Agrate Brianza (MB), ItalyIMM-CNR, Unit of Agrate Brianza, via C. Olivetti 2, I-20864 Agrate Brianza (MB), ItalyCNR-SCITEC, via A. Corti 12, I-20133 Milano, ItalyPolitecnico di Milano, Dipartimento di Chimica, Materiali e Ingegneria Chimica, Via Mancinelli 7, I-20131 Milano, ItalyIMM-CNR, Unit of Agrate Brianza, via C. Olivetti 2, I-20864 Agrate Brianza (MB), ItalyIn the 2D material framework, molybdenum disulfide (MoS<sub>2</sub>) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS<sub>2</sub> remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS<sub>2</sub> from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO<sub>3</sub>) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS<sub>2</sub>. Further, we characterized the as-grown MoS<sub>2</sub> morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS<sub>2</sub> for various target applications.https://www.mdpi.com/1996-1944/13/12/27862D materialstransition metal dichalcogenidesmolybdenum disulfidechemical vapor deposition |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Pinakapani Tummala Alessio Lamperti Mario Alia Erika Kozma Luca Giampaolo Nobili Alessandro Molle |
spellingShingle |
Pinakapani Tummala Alessio Lamperti Mario Alia Erika Kozma Luca Giampaolo Nobili Alessandro Molle Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition Materials 2D materials transition metal dichalcogenides molybdenum disulfide chemical vapor deposition |
author_facet |
Pinakapani Tummala Alessio Lamperti Mario Alia Erika Kozma Luca Giampaolo Nobili Alessandro Molle |
author_sort |
Pinakapani Tummala |
title |
Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition |
title_short |
Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition |
title_full |
Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition |
title_fullStr |
Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition |
title_full_unstemmed |
Application-Oriented Growth of a Molybdenum Disulfide (MoS<sub>2</sub>) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition |
title_sort |
application-oriented growth of a molybdenum disulfide (mos<sub>2</sub>) single layer by means of parametrically optimized chemical vapor deposition |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2020-06-01 |
description |
In the 2D material framework, molybdenum disulfide (MoS<sub>2</sub>) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS<sub>2</sub> remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS<sub>2</sub> from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO<sub>3</sub>) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS<sub>2</sub>. Further, we characterized the as-grown MoS<sub>2</sub> morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS<sub>2</sub> for various target applications. |
topic |
2D materials transition metal dichalcogenides molybdenum disulfide chemical vapor deposition |
url |
https://www.mdpi.com/1996-1944/13/12/2786 |
work_keys_str_mv |
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