Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate
Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2016-09-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2079-6412/6/3/39 |