An investigation into the conversion of In<sub>2</sub>O<sub>3 </sub>into InN nanowires
<p>Abstract</p> <p>Straight In<sub>2</sub>O<sub>3 </sub>nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/311 |
| Summary: | <p>Abstract</p> <p>Straight In<sub>2</sub>O<sub>3 </sub>nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In<sub>2</sub>O<sub>3 </sub>while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In<sub>2</sub>O<sub>3 </sub>NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH<sub>3 </sub>and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In<sub>2</sub>O<sub>3 </sub>to InN. We find that the nitridation of In<sub>2</sub>O<sub>3 </sub>is effective by using NH<sub>3 </sub>and H<sub>2 </sub>or a two-step temperature nitridation process using just NH<sub>3 </sub>and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.</p> |
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| ISSN: | 1931-7573 1556-276X |