An investigation into the conversion of In<sub>2</sub>O<sub>3 </sub>into InN nanowires
<p>Abstract</p> <p>Straight In<sub>2</sub>O<sub>3 </sub>nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks...
Main Authors: | Zervos Matthew, Papageorgiou Polina, Othonos Andreas |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
|
Series: | Nanoscale Research Letters |
Online Access: | http://www.nanoscalereslett.com/content/6/1/311 |
Similar Items
-
Synthesis of Tin Nitride Sn<sub> <it>x</it> </sub>N<sub> <it>y</it> </sub>Nanowires by Chemical Vapour Deposition
by: Othonos Andreas, et al.
Published: (2009-01-01) -
Low Temperature Growth of In<sub>2</sub>O<sub>3</sub>and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH<sub>4</sub>Cl in In
by: Tsokkou Demetra, et al.
Published: (2009-01-01) -
Femtosecond Carrier Dynamics in In<sub>2</sub>O<sub>3</sub>Nanocrystals
by: Zervos Matthew, et al.
Published: (2009-01-01) -
Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport
by: Zervos Matthew, et al.
Published: (2008-01-01) -
Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al<sub>2</sub>O<sub>3</sub>Nanowires Based on Porous Anodic Alumina Film
by: Wang Da-Jian, et al.
Published: (2009-01-01)