In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-<i>k</i>) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-<i&...

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Main Authors:	Chih-Yen Lee, Chi-Yang Yan, Yi-Lung Cheng
Format:	Article
Language:	English
Published:	MDPI AG 2021-03-01
Series:	Coatings
Subjects:	porous low-<i>k</i> dielectric plasma damage HMDS Cu barrier reliability time-dependent-dielectric-breakdown
Online Access:	https://www.mdpi.com/2079-6412/11/3/314

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spelling	doaj-ff60634d9afb48a9a033082ba7804fe22021-03-10T00:07:18ZengMDPI AGCoatings2079-64122021-03-011131431410.3390/coatings11030314In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma TreatmentChih-Yen Lee0Chi-Yang Yan1Yi-Lung Cheng2Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanDepartment of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanDepartment of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanPlasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-<i>k</i>) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-<i>k</i> materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-<i>k</i> material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-<i>k</i> material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-<i>k </i>material used for advanced technology nodes.https://www.mdpi.com/2079-6412/11/3/314porous low-<i>k</i> dielectricplasma damageHMDSCu barrierreliabilitytime-dependent-dielectric-breakdown
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Chih-Yen Lee Chi-Yang Yan Yi-Lung Cheng
spellingShingle	Chih-Yen Lee Chi-Yang Yan Yi-Lung Cheng In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment Coatings porous low-<i>k</i> dielectric plasma damage HMDS Cu barrier reliability time-dependent-dielectric-breakdown
author_facet	Chih-Yen Lee Chi-Yang Yan Yi-Lung Cheng
author_sort	Chih-Yen Lee
title	In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment
title_short	In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment
title_full	In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment
title_fullStr	In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment
title_full_unstemmed	In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment
title_sort	in-situ repair plasma-induced damage and cap dielectric barrier for porous low-dielectric-constant materials by hmds plasma treatment
publisher	MDPI AG
series	Coatings
issn	2079-6412
publishDate	2021-03-01
description	Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-<i>k</i>) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-<i>k</i> materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-<i>k</i> material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-<i>k</i> material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-<i>k </i>material used for advanced technology nodes.
topic	porous low-<i>k</i> dielectric plasma damage HMDS Cu barrier reliability time-dependent-dielectric-breakdown
url	https://www.mdpi.com/2079-6412/11/3/314
work_keys_str_mv	AT chihyenlee insiturepairplasmainduceddamageandcapdielectricbarrierforporouslowdielectricconstantmaterialsbyhmdsplasmatreatment AT chiyangyan insiturepairplasmainduceddamageandcapdielectricbarrierforporouslowdielectricconstantmaterialsbyhmdsplasmatreatment AT yilungcheng insiturepairplasmainduceddamageandcapdielectricbarrierforporouslowdielectricconstantmaterialsbyhmdsplasmatreatment
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In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

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