Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene
Abstract Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors and integrated circuit applications due to their extraordinary electrical properties. To date, as-made SWCNT transistors are usually p-type in air, and it still remains challenging for realizing n-typ...
Main Authors: | , , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2017-07-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-017-05967-w |
id |
doaj-ff821b25134746aab5a61337bcfde152 |
---|---|
record_format |
Article |
spelling |
doaj-ff821b25134746aab5a61337bcfde1522020-12-08T01:02:58ZengNature Publishing GroupScientific Reports2045-23222017-07-017111010.1038/s41598-017-05967-wEfficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using DecamethylcobaltoceneJian-Long Xu0Rui-Xuan Dai1Yan Xin2Yi-Lin Sun3Xian Li4Yang-Xin Yu5Lan Xiang6Dan Xie7Sui-Dong Wang8Tian-Ling Ren9Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityInstitute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityLaboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua UniversityInstitute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityInstitute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityLaboratory of Chemical Engineering Thermodynamics, Department of Chemical Engineering, Tsinghua UniversityDepartment of Chemical Engineering, Tsinghua UniversityInstitute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityInstitute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials & Devices, Soochow UniversityInstitute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua UniversityAbstract Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors and integrated circuit applications due to their extraordinary electrical properties. To date, as-made SWCNT transistors are usually p-type in air, and it still remains challenging for realizing n-type devices. Herein, we present efficient and reversible electron doping of semiconductor-enriched single-walled carbon nanotubes (s-SWCNTs) by firstly utilizing decamethylcobaltocene (DMC) deposited by a simple spin-coating process at room temperature as an electron donor. A n-type transistor behavior with high on current, large I on /I off ratio and excellent uniformity is obtained by surface charge transfer from the electron donor DMC to acceptor s-SWCNTs, which is further corroborated by the Raman spectra and the ab initio simulation results. The DMC dopant molecules could be reversibly removed by immersion in N, N-Dimethylformamide solvent, indicating its reversibility and providing another way to control the carrier concentration effectively as well as selective removal of surface dopants on demand. Furthermore, the n-type behaviors including threshold voltage, on current, field-effect mobility, contact resistances, etc. are well controllable by adjusting the surface doping concentration. This work paves the way to explore and obtain high-performance n-type nanotubes for future complementary CMOS circuit and system applications.https://doi.org/10.1038/s41598-017-05967-w |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jian-Long Xu Rui-Xuan Dai Yan Xin Yi-Lin Sun Xian Li Yang-Xin Yu Lan Xiang Dan Xie Sui-Dong Wang Tian-Ling Ren |
spellingShingle |
Jian-Long Xu Rui-Xuan Dai Yan Xin Yi-Lin Sun Xian Li Yang-Xin Yu Lan Xiang Dan Xie Sui-Dong Wang Tian-Ling Ren Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene Scientific Reports |
author_facet |
Jian-Long Xu Rui-Xuan Dai Yan Xin Yi-Lin Sun Xian Li Yang-Xin Yu Lan Xiang Dan Xie Sui-Dong Wang Tian-Ling Ren |
author_sort |
Jian-Long Xu |
title |
Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene |
title_short |
Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene |
title_full |
Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene |
title_fullStr |
Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene |
title_full_unstemmed |
Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene |
title_sort |
efficient and reversible electron doping of semiconductor-enriched single-walled carbon nanotubes by using decamethylcobaltocene |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2017-07-01 |
description |
Abstract Single-walled carbon nanotubes (SWCNTs) offer great potential for field-effect transistors and integrated circuit applications due to their extraordinary electrical properties. To date, as-made SWCNT transistors are usually p-type in air, and it still remains challenging for realizing n-type devices. Herein, we present efficient and reversible electron doping of semiconductor-enriched single-walled carbon nanotubes (s-SWCNTs) by firstly utilizing decamethylcobaltocene (DMC) deposited by a simple spin-coating process at room temperature as an electron donor. A n-type transistor behavior with high on current, large I on /I off ratio and excellent uniformity is obtained by surface charge transfer from the electron donor DMC to acceptor s-SWCNTs, which is further corroborated by the Raman spectra and the ab initio simulation results. The DMC dopant molecules could be reversibly removed by immersion in N, N-Dimethylformamide solvent, indicating its reversibility and providing another way to control the carrier concentration effectively as well as selective removal of surface dopants on demand. Furthermore, the n-type behaviors including threshold voltage, on current, field-effect mobility, contact resistances, etc. are well controllable by adjusting the surface doping concentration. This work paves the way to explore and obtain high-performance n-type nanotubes for future complementary CMOS circuit and system applications. |
url |
https://doi.org/10.1038/s41598-017-05967-w |
work_keys_str_mv |
AT jianlongxu efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT ruixuandai efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT yanxin efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT yilinsun efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT xianli efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT yangxinyu efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT lanxiang efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT danxie efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT suidongwang efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene AT tianlingren efficientandreversibleelectrondopingofsemiconductorenrichedsinglewalledcarbonnanotubesbyusingdecamethylcobaltocene |
_version_ |
1724395502512898048 |