Formation of porous silicon: mechanism of macropores formation in n-type si
We report the formation of macropores in n-Si (100) substrates for different etching times of 20, 40 and 60 min at a constant current density of 25 mA/cm2 under front-side illumination in HF:ethanol (1:4) solution. After etching for 20 min, four-branch-shaped pores of various sizes were observed at...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia,
2013-05.
|
| Online Access: | Get fulltext |