Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure

Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristic...

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Bibliographic Details
Main Authors:	Maneea Eizadi Sharifabad (Author), Mastura Shafinaz Zainal Abidin (Author), Shaharin Fadzli Abd Rahman (Author), Abdul Manaf Hashim (Author), Abdul Rahim Abdul Rahman (Author), Nurul Afzan Omar (Author), Mohd Nizam Osman (Author), Rabia Qindeel (Author)
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia, 2011-03.
Online Access:	Get fulltext

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