Analytical modeling of trilayer graphene nanoribbon schottky-barrier fet for high-speed switching applications
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistor s. The current-voltage characteristic of...
Main Authors: | Rahmani, Meisam (Author), Ahmadi, Mohammad Taghi (Author), Feiz Abadi, Hediyeh Karimi (Author), Saeidmanesh, Mehdi (Author), Akbari, Elnaz (Author), Ismail, Razali (Author) |
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Format: | Article |
Language: | English |
Published: |
Springer Link,
2013.
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Subjects: | |
Online Access: | Get fulltext |
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