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01231 am a22001933u 4500 |
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|a Ali, Nisar
|e author
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|a Ajmal, S.
|e author
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|a Shah, Muhammad Tahir
|e author
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|a Ahmed, Rashid
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|a Ul-Haq, Bakhtiar
|e author
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|a Shaari, Amiruddin
|e author
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|a Effect of antimony variation on the physical properties of thermally deposited SnS thin films
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|b National Institute R and D of Materials Physics,
|c 2014.
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|z Get fulltext
|u http://eprints.utm.my/id/eprint/52477/1/RashidAhmed2014_Effectofantimonyvariation.pdf
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|a Antimony doped tin sulphide thin films were prepared on glass substrate from SnS and Sb2S3 powder by thermal evaporation techniques. The thin films were annealed in argon gas at 250°C for 30 minutes. The films were characterized by X-ray diffraction (XRD), optical microscopy, optical absorption, photoconductivity, and hot-probe techniques. The XRD studies revealed that the annealed films are polycrystalline. The band gap was found to be in the range 2.2-2.6eV along with p-type conductivity. The value of the absorption coefficient is found to be higher than 105 cm-1
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|a Q Science
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