Design of voltage mode electronically tunable first order all pass filter in ±0.7 V 16 nm CNFET technology

A novel voltage mode first order active only tuneable all pass filter (AOTAPF) circuit configuration is presented. The AOTAPF has been designed using ±0.7 V, 16 nm carbon nanotube field effect transistor (CNFET) Technology. The circuit uses CNFET based varactor and unity gain inverting amplifier (UG...

Full description

Bibliographic Details
Main Authors: Masud, Muhammad (Author), A'ain, Abu (Author), Khan, Iqbal (Author), Husin, Nasir (Author)
Format: Article
Language:English
Published: MDPI AG, 2019-01.
Subjects:
Online Access:Get fulltext
LEADER 01735 am a22001693u 4500
001 89581
042 |a dc 
100 1 0 |a Masud, Muhammad  |e author 
700 1 0 |a A'ain, Abu  |e author 
700 1 0 |a Khan, Iqbal  |e author 
700 1 0 |a Husin, Nasir  |e author 
245 0 0 |a Design of voltage mode electronically tunable first order all pass filter in ±0.7 V 16 nm CNFET technology 
260 |b MDPI AG,   |c 2019-01. 
856 |z Get fulltext  |u http://eprints.utm.my/id/eprint/89581/1/AbuKhariA%27ain2019_DesignofVoltageModeElectronicallyTunable.pdf 
520 |a A novel voltage mode first order active only tuneable all pass filter (AOTAPF) circuit configuration is presented. The AOTAPF has been designed using ±0.7 V, 16 nm carbon nanotube field effect transistor (CNFET) Technology. The circuit uses CNFET based varactor and unity gain inverting amplifier (UGIA). The presented AOTAPF is realized with three N-type CNFETs and without any external passive components. It is to be noted that the realized circuit uses only two CNFETs between its supply-rails and thus, suitable for low-voltage operation. The electronic tunability is achieved by varying the voltage controlled capacitance of the employed CNFET varactor. By altering the varactor tuning voltage, a wide tunable range of pole frequency between 34.2 GHz to 56.9 GHz is achieved. The proposed circuit does not need any matching constraint and is suitable for multi-GHz frequency applications. The presented AOTAPF performance is substantiated with HSPICE simulation program for 16 nm technology-node, using the well-known Stanford CNFET model. AOTAPF simulation results verify the theory for a wide frequency-range. 
546 |a en 
650 0 4 |a TK Electrical engineering. Electronics Nuclear engineering